Abstract: The available delivery capability (ADC) of a power distribution network with respect to a power transaction is evaluated in real-time. The power transaction involves simultaneous power deliveries from power sources in a source area to loads in a sink area. First, a list of contingencies are ranked in the power distribution network with respect to static security constraints to obtain a subset of top-ranked contingencies. For each top-ranked contingency in the subset, a representation of the power transaction in a steady state of the power distribution network, in a form of parameterized three-phase power flow equations, is solved to obtain a corresponding power delivery capability (PDC) and a corresponding binding constraint among the static security constraints. The reliability of the power transaction in the power distribution network is then evaluated based on, at least in part, a first contingency PDC which is a smallest PDC among obtained corresponding PDCs.

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises steps as follows. At least one trench is provided in a low-k dielectric layer on a substrate. The trench is filled with a copper (Cu) film. Pure cobalt (Co) is deposited on a surface of the Cu film by introducing a flow of a carrier gas carrying a Co-containing precursor and a reducing agent onto the surface of the Cu film. The flowrate of the flow is within a range from 5 to 19 sccm.

Abstract: In a process of forming a seed layer, particularly in a vertical trench or via, a semiconductor substrate having a dielectric structure and a hard mask structure thereon is provided. An opening is formed in the hard mask structure, and a trench or via is formed in the dielectric structure in communication with the opening, wherein an area of the opening is greater than that of an entrance of the trench or via. A seed layer is then deposited in the trench or via through the opening, and then subjected to a reflow process.