Abstract: A thin film transistor and a preparation method thereof, a display panel, and a display device. The thin film transistor includes an active structure and a gate that are stacked and insulated by an interlayer insulating layer, the active structure includes a source region, a drain region, and a channel region, the source region and the drain region are located on two sides of the channel region, and in a thickness direction of the interlayer insulating layer, a projection of the gate overlaps with a projection of the channel region; wherein the channel region includes a metal oxide material, a ratio of a number of indium atoms and a number of zinc atoms in the channel region is a, and a?4.

Abstract: The disclosure relates to the field of display technologies, and in particular, to a thin film transistor, a display panel, and a display apparatus. The thin film transistor includes: an active layer provided on a substrate. The active layer includes a first semiconductor layer, a first barrier layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is located on a side, away from the substrate, of the second semiconductor layer, and a mobility rate of the first semiconductor layer is less than a mobility rate of the second semiconductor layer. A double channel is formed by providing the first barrier layer provided between the first semiconductor layer and the second semiconductor layer, so as to make a threshold voltage Vth positive and improve the mobility rate of the thin film transistor, so that a greater processing Margin may be accommodated, thereby ensuring stability of a device.

Abstract: An array substrate, a manufacturing method for the array substrate, and the display device are provided. The array substrate includes a substrate. The substrate includes at least one first region and at least one second region. A low temperature poly-silicon thin film transistor is disposed in the at least one first region, and an oxide thin film transistor is disposed in the at least one second region. The oxide-TFT includes an oxide semiconductor layer, a gate insulation layer, a gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer includes a channel portion and contact portions connected to the channel portion. The channel portion, the gate insulation layer, and the gate electrode are sequentially stacked. The contact portions are respectively in contact with the source electrode and the drain electrode, and the channel portion at least partially protrudes in a direction away from the substrate.

Abstract: A thin film transistor, a manufacturing method for the thin film transistor, and a display device are provided. The thin film transistor includes a substrate, and further includes an oxide semiconductor layer, a gate electrode, a gate insulation layer, a source electrode, and a drain electrode that are disposed on the substrate. The oxide semiconductor layer includes a channel portion, a first contact portion, and a second contact portion, where the source electrode is in contact with the first contact portion, and the drain electrode is in contact with the second contact portion. The channel portion at least partially protrudes in a direction away from the substrate, and the gate insulation layer and the gate electrode are successively stacked on the channel portion.

Abstract: An array substrate, a fabrication method thereof, and a display panel are provided. The array substrate comprises a substrate, and a plurality of thin-film-transistors, which includes an active layer formed on the substrate including a source region, a drain region, and a channel region located between the source region and the drain region, a source electrode metal contact layer, a drain electrode metal contact layer, a barrier layer formed on a side of the active layer facing away from the substrate, a source electrode formed on a side of the source electrode metal contact layer facing away from active layer, a drain electrode formed on a side of the drain electrode metal contact layer facing away from the active layer, and a gate electrode insulated from the barrier layer and formed on a side of the barrier layer facing away from the active layer.

Abstract: An array substrate, a fabrication method thereof, and a display panel are provided. The array substrate comprises a substrate, and a plurality of thin-film-transistors, which includes an active layer formed on the substrate including a source region, a drain region, and a channel region located between the source region and the drain region, a source electrode metal contact layer, a drain electrode metal contact layer, a barrier layer formed on a side of the active layer facing away from the substrate, a source electrode formed on a side of the source electrode metal contact layer facing away from active layer, a drain electrode formed on a side of the drain electrode metal contact layer facing away from the active layer, and a gate electrode insulated from the barrier layer and formed on a side of the barrier layer facing away from the active layer.