Patents by Inventor Guowen YUAN

Guowen YUAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12116281
    Abstract: A method for efficiently eliminating graphene wrinkles formed by chemical vapor deposition includes: directly growing super smooth wrinkle-free graphene films on metal substrates such as copper, nickel and alloys thereof and non-metal substrates such as silicon oxide and silicon carbide, or eliminating the wrinkles of wrinkled graphene through controlled proton injection at a high temperature by precisely controlling the temperature and hydrogen plasma power and time for generating protons; where the plasma-assisted chemical vapor deposition system includes a plasma generator, a vacuum system and a heating system; where the power of the plasma generator is 5 to 1000 W, the pressure of the vacuum system is 10?5 to 105 Pa, and the heating temperature of the system is controllable between 25 to 1000° C.; directly growing a super smooth wrinkle-free graphene by injecting protons on various substrates during growth.
    Type: Grant
    Filed: December 24, 2019
    Date of Patent: October 15, 2024
    Assignee: NANJING UNIVERSITY
    Inventors: Libo Gao, Guowen Yuan, Jie Xu
  • Publication number: 20220081300
    Abstract: A method for efficiently eliminating graphene wrinkles formed by chemical vapor deposition includes: directly growing super smooth wrinkle-free graphene films on metal substrates such as copper, nickel and alloys thereof and non-metal substrates such as silicon oxide and silicon carbide, or eliminating the wrinkles of wrinkled graphene through controlled proton injection at a high temperature by precisely controlling the temperature and hydrogen plasma power and time for generating protons; where the plasma-assisted chemical vapor deposition system includes a plasma generator, a vacuum system and a heating system; where the power of the plasma generator is 5 to 1000 W, the pressure of the vacuum system is 10?5 to 105 Pa, and the heating temperature of the system is controllable between 25 to 1000° C.; directly growing a super smooth wrinkle-free graphene by injecting protons on various substrates during growth.
    Type: Application
    Filed: December 24, 2019
    Publication date: March 17, 2022
    Applicant: NANJING UNIVERSITY
    Inventors: Libo GAO, Guowen YUAN, Jie XU