Patents by Inventor Guoxing SHENG

Guoxing SHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11011472
    Abstract: The present invention discloses a self-aligned register structure for base polysilicon and a preparation method thereof. The self-aligned register structure comprises a silicon substrate having a partially oxidized region of SiO2 medium, a SiO2 medium protective layer is arranged at a center above the silicon substrate, base polysilicon layers are located at left and right sides of the SiO2 medium protective layer, the adjacent base polysilicon layers are symmetrical to the SiO2 medium protective layer at equal spacing, and the spacing is equal to a thickness of the base polysilicon layer.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: May 18, 2021
    Assignee: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 55 RESEARCH INSTITUTE
    Inventors: Hongjun Liu, Xianwei Ying, Yangyang Zhao, Guoxing Sheng
  • Publication number: 20200066649
    Abstract: The present invention discloses a self-aligned register structure for base polysilicon and a preparation method thereof. The self-aligned register structure comprises a silicon substrate having a partially oxidized region of SiO2 medium, a SiO2 medium protective layer is arranged at a center above the silicon substrate, base polysilicon layers are located at left and right sides of the SiO2 medium protective layer, the adjacent base polysilicon layers are symmetrical to the SiO2 medium protective layer at equal spacing, and the spacing is equal to a thickness of the base polysilicon layer.
    Type: Application
    Filed: December 29, 2017
    Publication date: February 27, 2020
    Applicant: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 55 RESEARCH INSTITUTE
    Inventors: Hongjun LIU, Xianwei YING, Yangyang ZHAO, Guoxing SHENG