Abstract: An ultra-wideband electromagnetic band gap (EBG) structure includes multiple EBG units in an array. Each EBG unit includes a power plane, a dielectric substrate and a ground plane from top to bottom. The power plane includes a patch, a coupled complementary split ring resonator (C-CSRR) and a plurality of semi-improved Z-bridge structures. Each edge of the patch is provided with a semi-improved Z-bridge structure. The C-CSRR is provided within a ring formed by the semi-improved Z-bridge structures. The Z-bridge structure includes a first horizontal branch, a first vertical branch, a second horizontal branch and a second vertical branch connected in sequence. The second vertical branch is connected to the patch. First horizontal branches of adjacent EBG units are connected to each other. A circuit board including the aforementioned EBG structure is also provided.

Abstract: The disclosure relates to an anti-VEGF-PD1 bispecific antibody with a novel structure and a use thereof, which belongs to the technical field of molecular immunology. The CDR-H1 in the heavy chain variable region of the antibody is an amino acid sequence expressed by SEQ ID NO: 1, the CDR-H2 is an amino acid sequence expressed by SEQ ID NO: 2, the CDR-H3 is an amino acid sequence expressed by SEQ ID NO: 3, and the CDR-L in the light chain variable region of the antibody is an amino acid sequence expressed by SEQ ID NO:4.

Abstract: The disclosure relates to an anti-VEGF-PD1 bispecific antibody with a novel structure and a use thereof, which belongs to the technical field of molecular immunology. The CDR-H1 in the heavy chain variable region of the antibody is an amino acid sequence expressed by SEQ ID NO: 1, the CDR-H2 is an amino acid sequence expressed by SEQ ID NO: 2, the CDR-H3 is an amino acid sequence expressed by SEQ ID NO: 3, and the CDR-L in the light chain variable region of the antibody is an amino acid sequence expressed by SEQ ID NO:4.

Abstract: Provided is a method for preparing antibodies against a protein of interest, through which highly specific antibodies against all proteins can be effectively and rapidly prepared with low cost, and the epitope to which the antibody is directed can be determined, so that a library covering epitopes on the surface of the proteins of interest and a library of antibodies against all the epitopes can be established. The antibodies are proved to be useful in detection, protein function investigation and antibody pharmaceuticals.

Abstract: Provided is a method for preparing antibodies against a protein of interest, through which highly specific antibodies against all proteins can be effectively and rapidly prepared with low cost, and the epitope to which the antibody is directed can be determined, so that a library covering epitopes on the surface of the proteins of interest and a library of antibodies against all the epitopes can be established. The antibodies are proved to be useful in detection, protein function investigation and antibody pharmaceuticals.

Abstract: Provided is a method for preparing antibodies against a protein of interest, through which highly specific antibodies against all proteins can be effectively and rapidly prepared with low cost, and the epitope to which the antibody is directed can be determined, so that a library covering epitopes on the surface of the proteins of interest and a library of antibodies against all the epitopes can be established. The antibodies are proved to be useful in detection, protein function investigation and antibody pharmaceuticals.

Abstract: An overvoltage protection circuit includes a shunt circuit adapted for connection to at least one circuit node to be protected from an overvoltage condition and a voltage generator coupled to the shunt circuit. The shunt circuit is selectively activated as a function of a control signal supplied to the shunt circuit. The voltage generator is operative to generate the control signal for activating the shunt circuit during the overvoltage condition. The control signal has a level which varies in a manner that at least partially changes offsets in activation threshold of the shunt circuit.

Abstract: An overvoltage protection circuit includes a shunt circuit adapted for connection to at least one circuit node to be protected from an overvoltage condition and a voltage generator coupled to the shunt circuit. The shunt circuit is selectively activated as a function of a control signal supplied to the shunt circuit. The voltage generator is operative to generate the control signal for activating the shunt circuit during the overvoltage condition. The control signal has a level which varies in a manner that at least partially changes offsets in activation threshold of the shunt circuit.