Abstract: A displacement detector may include a substrate and a membrane having an inner surface facing the substrate. A mounting area may be arranged to fix the membrane along at least part of the perimeter of the membrane, wherein the mounting area, the inner surface and the substrate enclose a back volume. An acoustic compliance of the back volume may be arranged to be the same or larger than an acoustic compliance of the membrane. An optical sensor may be configured to generate a sensor signal indicative of a displacement of the membrane.

Abstract: An acoustic sensor is disclosed, the sensor including a laser and a membrane configured to vibrate in the presence of an acoustic wave, and to reflect radiation emitted by the laser back toward the laser to produce a self-mixing interference effect corresponding to the acoustic wave. The sensor also includes a cavity separating the membrane from the laser and extending rearward of a radiation-emitting surface of the laser, a majority volume of the cavity being disposed rearward of the radiation-emitting surface of the laser. Also disclosed is an apparatus including the acoustic sensor, and a method of manufacturing the acoustic sensor.

Abstract: Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

Abstract: An optical link channel auto-negotiation method and apparatus, a non-transitory computer-readable storage medium are disclosed. The optical link channel auto-negotiation method may include at least one of the following: configuring a receiving rate, determining whether a receive clock recovered from received data by a physical layer (PHY) module is locked, and in response to determining that the receive clock recovered from the received data by the PHY module is locked, determining that the receiving rate is configured correctly; configuring a first predetermined parameter in response to determining that the receiving rate is configured correctly, determining whether code block data of the PHY module is in a synchronized state, and in response to determining that the code block data of the PHY module is in a synchronized state, determining that the first predetermined parameter is configured correctly.

Abstract: A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.

Abstract: A vertical cavity surface emitting laser (VCSEL) device comprises an interior light generating region, an exterior light emitting surface, and a spatial modulation region monolithically integrated with the interior light generating region so that the spatial modulation region is located between the interior light generating region and the exterior light emitting surface. The spatial modulation region is configured to shape the light generated by the interior light generating region before the generated light is emitted from the exterior light emitting surface. The VCSEL device may be configured to emit a beam of light along a predetermined direction, to emit a beam of light having a predetermined beam divergence, and/or to emit a beam of light having a predetermined shape or structure transverse to a direction of propagation so that the beam of light forms a predetermined spot or pattern of light when projected onto a surface.

Abstract: An optical link channel auto-negotiation method and apparatus, a non-transitory computer-readable storage medium are disclosed. The optical link channel auto-negotiation method may include at least one of the following: configuring a receiving rate, determining whether a receive clock recovered from received data by a physical layer (PHY) module is locked, and in response to determining that the receive clock recovered from the received data by the PHY module is locked, determining that the receiving rate is configured correctly; configuring a first predetermined parameter in response to determining that the receiving rate is configured correctly, determining whether code block data of the PHY module is in a synchronized state, and in response to determining that the code block data of the PHY module is in a synchronized state, determining that the first predetermined parameter is configured correctly.

Abstract: Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.

Abstract: A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.

Abstract: Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

Abstract: Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.

Abstract: New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.

Abstract: New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.

Abstract: New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.

Abstract: New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.

Abstract: New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.