Abstract: A transparent display panel, a manufacturing method thereof, and a transparent display apparatus are disclosed. The transparent display panel includes: a substrate including a non-transparent region and a transparent region; a first power line and a first read line both disposed on the substrate and arranged in the same layer; a dielectric layer covering both the first power line and the first read line; a second power line and a second read line both disposed on a side of the dielectric layer facing away from the substrate and arranged in the same layer. The second power line is electrically connected to the first power line through a first conductive plug extending through the dielectric layer, and the second read line is electrically connected to the first read line through a second conductive plug extending through the dielectric layer.

Abstract: The present disclosure provides an organic light emitting display substrate and a method for manufacturing the same. The organic light emitting display substrate includes a substrate, and a drive transistor and an organic light emitting diode disposed on the substrate. In a direction away from the substrate, the organic light emitting diode successively includes: a first reflective electrode, an organic light emitting layer, and a second reflective electrode. A drain of the drive transistor is electrically coupled to the first reflective electrode. The organic light emitting display substrate further includes a light guide layer. One side surface of the light guide layer is the light incident surface. The light incident surface is disposed opposite to the light outgoing surface of the organic light emitting diode so that the light emitted from the light outgoing surface enters the light guide layer.

Abstract: The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The display substrate includes a substrate; at least one pixel on a side of the substrate, the at least one pixel comprising a driving transistor, the driving transistor comprising a drain; an insulating layer on a side of the driving transistor away from the substrate, the insulating layer covering the driving transistor and having a first via hole opposite to the drain; an auxiliary conductive structure on a side of the insulating layer away from the substrate, and the auxiliary conductive structure connected to the drain through the first via hole; and a first planarization layer on a side of the auxiliary conductive structure away from the substrate, and having a second via hole disposed therein.

Abstract: The present application provides an organic light emitting display substrate and a method of fabricating the same. The organic light emitting display substrate includes: a base substrate; and a driving transistor provided on the base substrate, wherein the driving transistor includes: an active layer; a first insulating layer having at least one sub-layer covering the active layer and having a first via hole therein; and a source electrode and a drain electrode disposed on a side of the first insulating layer distal to the base substrate, and connected to the active layer through the first via hole in the first insulating layer.

Abstract: The disclosure discloses a display substrate, a method for fabricating the same, and a display device. The display substrate includes: a light-shielding metal layer pattern on a base substrate; a photo-sensitive sensing element layer on the light-shielding metal layer pattern, wherein an orthographic projection of the photo-sensitive sensing element layer onto the base substrate lies in an overlapping area of orthographic projections of the light-shielding metal layer pattern and the sub-pixel areas onto the base substrate; a buffer layer on the photo-sensitive sensing element layer; and a compensation control TFT and a signal line on the buffer layer, wherein a source electrode of the compensation control TFT is electrically connected with the light-shielding metal layer pattern, and the signal line is electrically connected with the photo-sensitive sensing element layer.

Abstract: The embodiment of the present disclosure provides an array substrate, a display panel and a display device. The array substrate comprises a plurality of self-luminous units and photosensitive units disposed on a base substrate, wherein the photosensitive units are located on a side of the self-luminous units proximate to the base substrate, and each of the self-luminous units is correspondingly provided with the photosensitive unit; the self-luminous unit comprises a first electrode, a light-emitting functional layer and a second electrode disposed sequentially in a direction away from the base substrate; the first electrode comprises a light-transmitting region and a reflective region interconnected with each other; the second electrode is a transparent electrode.

Abstract: The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.

Abstract: A pixel circuit includes a substrate, and a first thin film transistor and a second transistor which are disposed on the substrate. The first thin film transistor is in a top-gate structure, and the second thin film transistor is in a bottom-gate structure; a first electrode of the first thin film transistor is electrically connected with a gate electrode of the second thin film transistor, and the first electrode of the first thin film transistor and the gate electrode of the second thin film transistor are in a same layer on the substrate. The pixel circuit can have a relatively high switch speed and a relatively large driving current, a manufacturing method is easily realized and a process cost is relatively low.

Abstract: The present disclosure provides a color filter substrate and a fabricating method thereof, and a display panel. The method includes: forming a black matrix on a base substrate; forming an auxiliary electrode on a side of the black matrix away from the base substrate, an orthographic projection of the black matrix on the base substrate covering an orthographic projection of the auxiliary electrode on the base substrate; and forming color filters on the base substrate and in a space defined by the black matrix on which the auxiliary electrode is formed.

Abstract: The present disclosure provides a method for manufacturing an array substrate, an array substrate, and a display device. The method for manufacturing the array substrate includes: forming a light-shielding layer and a buffer layer in sequence on a base substrate; forming an active layer on the buffer layer, and forming a first via hole in the active layer; forming an interlayer dielectric layer on the active layer; forming a second via hole in the interlayer dielectric layer at a position corresponding to the first via hole and a third via hole in the buffer layer at a position corresponding to the first via hole by a single patterning process; forming a source/drain electrode layer on the interlayer dielectric layer, in which the source/drain electrode layer is electrically connected to the light-shielding layer through the second via hole, the first via hole and the third via hole in sequence.

Abstract: The present disclosure relates to thin film transistor, fabricating method thereof, array substrate, and display device. A thin film transistor is provided that comprises: a substrate; an active layer, a first source electrode, and a first drain electrode disposed on a side of the substrate, the first source and drain electrodes being coupled to the active layer; and a first insulating layer and a gate disposed on a side of the active layer which is facing away from the substrate, the first insulating layer positioned between the active layer and the gate, wherein, the gate has a substantially same material as the first source and drain electrodes, and a main-body portion of the gate has a substantially same thickness as main-body portions of the first source and drain electrodes.

Abstract: An OLED display panel includes a cover and a backplane, a plurality of color filter (CF) units are arranged in an array on the cover; auxiliary cathodes are filled into gaps among the CF units; the auxiliary cathodes include a black matrix, a buffer layer and a metal layer; a planarization layer is disposed on the auxiliary cathodes and the CF units; a plurality of openings are disposed in the planarization layer at locations corresponding to the auxiliary cathodes; a plurality of spacers are disposed on the planarization layer at locations corresponding to the auxiliary cathodes; the spacers abut against and support the cover and the backplane; a transparent electrode layer is disposed on the planarization layer and the spacers and is communicated with the auxiliary cathodes via the openings; and the plurality of CF units of the cover and pixel regions of the backplane are oppositely arranged.

Abstract: Provided are an array substrate, a display panel, a display apparatus and a preparation method therefor. The array substrate comprises: a base substrate; and multiple pixel units arranged on one side of the base substrate, each of the pixel units comprising: a thin-film transistor and an electroluminescent structure, and a shading structure located between the thin-film transistor and the base substrate, wherein the thin-film transistor comprises: an active layer located on one side, away from the base substrate, of the shading structure; the electroluminescent structure comprises: first electrodes for driving the pixel units; and one of the shading structure and the active layer is a same-layer structure fabricated by the same mask plate as the first electrodes so as to reduce the number of mask procedures required in preparation of an array substrate.

Abstract: The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate and a display panel. The thin film transistor includes a base substrate; a partially transparent layer on one side of the base substrate; a first gate electrode on one side of the partially transparent layer away from the base substrate; a second gate insulation layer on one side of the first gate electrode away from the base substrate; and an active layer on one side of the second gate insulation layer away from the base substrate. An orthographic projection of the partially transparent layer to the base substrate covers an orthographic projection of the active layer to the base substrate.

Abstract: The present application discloses a method of fabricating a thin film transistor. The method includes forming an active layer having a channel region, a source electrode contact region, and a drain electrode contact region, on a base substrate; forming a first photoresist layer on a side of the active layer distal to the base substrate, the first photoresist layer is formed in a region outside that corresponding to the channel region; forming an insulating material layer on a side of the first photoresist layer distal to the base substrate; forming a first conductive metal material layer on a side of the insulating material layer distal to the first photoresist layer; and removing the first photoresist layer, the insulating material layer, the first conductive metal material layer, in the region outside that corresponding to the channel region by a lift-off method.

Abstract: A thin-film transistor and a manufacturing method thereof, a display substrate and a display device are disclosed. The thin-film transistor includes a control gate, a floating gate, an injection layer, an active layer, a gate electrode, and a source electrode and a drain electrode, which are provided on the base substrate, in which the source electrode and the drain electrode are opposite to each other and electrically connected to the active layer. The injection layer is provided between the floating gate and the active layer; the active layer is provided between the control gate and the gate electrode; and the floating gate is provided between the control gate and the active layer.

Abstract: An array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method includes: forming a light-shielding pattern layer, a buffer layer, an active layer, a gate insulating layer and a gate electrode on a base substrate, which are away from the base substrate in sequence; depositing an amorphous silicon (a-Si) film on the base substrate in a temperature range of 15-150° C.; forming a first interlayer dielectric (ILD) at least disposed above the active layer by patterning the a-Si film; forming through holes in the first ILD, through which a source contact region and a drain contact region of the active layer are exposed; and forming a source electrode and a drain electrode on the first ILD, which are respectively connected with the source contact region and the drain contact region via the through holes.

Abstract: A method for manufacturing an array substrate, a display panel and a display device are provided. The method includes forming a semiconductor layer, a gate insulating layer, a gate and an inter-layer insulator successively on a base substrate; forming via holes in the inter-layer insulator so as to expose portions of the semiconductor layer; performing plasma bombardment to the portions of the semiconductor layer exposed in the via holes; forming a source electrode and a drain electrode coupled with the semiconductor layer through the via holes respectively on the inter-layer insulator.

Abstract: The present application provides a thin film transistor, a method of fabricating a thin film transistor and an array substrate. The thin film transistor includes: a gate electrode on a substrate and having first and second side surfaces facing each other; and an active layer between the first side surface and the second side surface of the gate electrode and having a third side surface and a fourth side surface. The third side surface of the active layer and the first side surface of the gate electrode face and are spaced apart from each other, the fourth side surface of the active layer and the second side surface of the gate electrode face and are spaced apart from each other, and at least one portion of the gate electrode is in the same range as at least one portion of the active layer in a height direction.

Abstract: The present disclosure relates to a display substrate, a manufacturing method thereof, and a display device. The display substrate comprises: a plurality of sub-pixels arranged in an array; a base substrate; and an interlayer insulating layer, at least one heightened part and a plurality of signal wires, sequentially disposed on the base substrate, wherein an orthographic projection of the heightened part on the base substrate is located between orthographic projections of two adjacent sub-pixels on the base substrate, and two adjacent signal wires between the two adjacent sub-pixels are located on two sides of the heightened part and at least partially cover two lateral sides of the heightened part respectively.