Abstract: A pixel unit, a compensation method of the pixel unit, a display device and a manufacturing method of the display device are disclosed. The pixel unit includes a light-emitting circuit configured to emit light under control of an external control circuit, a photosensitive element configured to sense a light intensity of light emitted by the light-emitting circuit and to output a sensed light intensity signal by a sensing output terminal, and a switch circuit configured to control an ON/OFF state between the sensing output terminal and the external control circuit.

Abstract: The present application discloses an organic light emitting diode display panel having a plurality of subpixels. The organic light emitting diode display panel includes an array substrate; and a counter substrate facing the array substrate. The counter substrate includes a plurality of organic light emitting diodes. The array substrate includes a first base substrate and a plurality of thin film transistors on the first base substrate for driving light emission of the plurality of organic light emitting diodes in the counter substrate.

Abstract: An organic light emitting diode and a manufacturing method thereof, a display panel are provided. The organic light emitting diode includes a light emitting structure and a first electrode structure. The first electrode structure is configured to drive the light emitting structure to emit light and includes a first electrode and a light reflecting layer, the light reflecting layer is disposed on a side of the first electrode away from the light emitting structure, wherein the first electrode and at least a portion of the light reflecting layer are overlapped with each other in a first direction, an insulating layer is at least partially disposed between the at least part of the light reflecting layer and the first electrode overlapped with each other, and the first direction is perpendicular to a plane on which the light reflecting layer is located.

Abstract: There are provided a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate comprises a planarization layer; a pixel definition layer on the planarization layer, wherein the pixel definition layer comprises an opening and a rib surrounding the opening; a first electrode on the planarization layer and within the opening; a light-emitting portion located within the opening and electrically connected to the first electrode; an auxiliary electrode on the rib of the pixel definition layer; an insulating portion between the first electrode and the auxiliary electrode; and a second electrode covering the auxiliary electrode and the light-emitting portion.

Abstract: Provided are a display substrate, a manufacturing method thereof and a display device. The display substrate includes a base and a plurality of subpixels arranged on the base in an array form. Each subpixel includes a light-emitting element, a subpixel driving circuitry coupled to the light-emitting element, and a light-emission detection circuitry configured to detect luminescence of light emitted by the light-emitting element. The light-emission detection circuitry includes a first control transistor and a PIN-type photodiode laminated in that order in a direction away from the base, a first electrode of the first control transistor is coupled to a cathode of the PIN-type photodiode, and an orthogonal projection of the first control transistor onto the base at least partially overlaps an orthogonal projection of the PIN-type photodiode onto the base.

Abstract: The present disclosure relates to the field of display technology, and provides an OLED display substrate, a manufacturing method and a display device. The OLED display substrate includes: a base substrate; an active layer arranged on the base substrate; a gate insulation layer arranged at a side of the active layer away from the base substrate; and a gate electrode layer arranged at a side of the gate insulation layer away from the base substrate. An orthogonal projection of the gate electrode layer onto the base substrate at least partially overlaps an orthogonal projection of the active layer onto the base substrate, and the gate electrode layer and the active layer form a first storage capacitor of the OLED display substrate.

Abstract: An array substrate includes: a base; light shield layers and a first auxiliary electrode that are disposed on the base; at least one insulating layer covering the light shield layers and the first auxiliary electrode; first electrodes that are disposed on the at least one insulating layer, a conductive connection portion; a pixel definition layer defining light-emitting regions and covering the conductive connection portion; organic light-emitting layers disposed on the first electrodes and located in the light-emitting regions defined by the pixel definition layer; and at least one second electrode covering the pixel definition layer and the organic light-emitting layers. A second electrode is electrically connected to the conductive connection portion through a via that penetrates through the pixel definition layer. The conductive connection portion is electrically connected to the first auxiliary electrode through a via that penetrates through the at least one insulating layer.

Abstract: A display panel and a display apparatus are disclosed. The display panel comprises: a plurality of signal lines extending in a first direction; at least one first reference voltage bus which extends in a second direction intersecting the first direction; and a plurality of electrostatic discharge units divided into a plurality of electrostatic discharge unit groups, wherein the plurality of electrostatic discharge unit groups are arranged in the second direction and each of the plurality of electrostatic discharge unit groups comprises at least two electrostatic discharge units arranged in the first direction, wherein at least one of the plurality of signal lines is electrically connected to the first reference voltage bus through at least one of the plurality of electrostatic discharge units.

Abstract: The present disclosure provides a method for manufacturing an array substrate, an array substrate, and a display device. The method for manufacturing the array substrate includes: forming a light-shielding layer and a buffer layer in sequence on a base substrate; forming an active layer on the buffer layer, and forming a first via hole in the active layer; forming an interlayer dielectric layer on the active layer; forming a second via hole in the interlayer dielectric layer at a position corresponding to the first via hole and a third via hole in the buffer layer at a position corresponding to the first via hole by a single patterning process; forming a source/drain electrode layer on the interlayer dielectric layer, in which the source/drain electrode layer is electrically connected to the light-shielding layer through the second via hole, the first via hole and the third via hole in sequence.

Abstract: The present application provides a thin film transistor, a method of fabricating a thin film transistor and an array substrate. The thin film transistor includes: a gate electrode on a substrate and having first and second side surfaces facing each other; and an active layer between the first side surface and the second side surface of the gate electrode and having a third side surface and a fourth side surface. The third side surface of the active layer and the first side surface of the gate electrode face and are spaced apart from each other, the fourth side surface of the active layer and the second side surface of the gate electrode face and are spaced apart from each other, and at least one portion of the gate electrode is in the same range as at least one portion of the active layer in a height direction.

Abstract: A display substrate, a manufacturing method thereof and a display device are provided. The method of manufacturing a display substrate includes manufacturing a plurality of gate insulation layers having different thicknesses on a base substrate in one patterning process.

Abstract: A pixel circuit includes a substrate, and a first thin film transistor and a second transistor which are disposed on the substrate. The first thin film transistor is in a top-gate structure, and the second thin film transistor is in a bottom-gate structure; a first electrode of the first thin film transistor is electrically connected with a gate electrode of the second thin film transistor, and the first electrode of the first thin film transistor and the gate electrode of the second thin film transistor are in a same layer on the substrate. The pixel circuit can have a relatively high switch speed and a relatively large driving current, a manufacturing method is easily realized and a process cost is relatively low.

Abstract: A thin film transistor is provided and includes an active layer, a source electrode, a drain electrode, a gate electrode and a gate electrode insulating layer, the active layer includes a source electrode region, a drain electrode region and a channel region, the source electrode region and the drain electrode region include a first metal material, and the channel region includes a semiconductor material made from oxidation of the first metal material.

Abstract: It is related to an array substrate (1). The array substrate (1) may include a base substrate (10) and a pixel define layer (30) on the base substrate (1). The pixel define layer (30) may include a plurality of thickness thinning regions (312). The thickness thinning regions (312) may have a smaller height than other areas of the pixel define layer (30) on the base substrate (1). The plurality of the thickness thinning regions (312) may be configured to guide flow of fillers to form an encapsulating layer (40) on the pixel define layer (30).

Abstract: A display substrate (10) includes a first base substrate (101) including a plurality of pixel units (101a ) arranged in an array, at least one of the plurality of pixel units (101a ) including at least two sub-pixel units and a transparent area (TA). The at least two sub-pixel units includes a first sub-pixel unit that is arranged between transparent areas (TA) of adjacent pixel units (101a ) in a first direction. An orthographic projection of a pixel drive circuit (105) electrically coupled to the first sub-electrode (102a ) corresponding to the first sub-pixel unit on the first base substrate (101) partially overlaps with an orthographic projection of a first sub-electrode (102a ) positionally corresponding to another sub-pixel unit on the first base substrate (101).

Abstract: The present disclosure provides a thin film transistor and a method for fabricating the same, an array substrate, and a display panel for enhancing the light shielding effect on a channel region of a thin film transistor, improving the light stability of the thin film transistor and improving the operational stability of the thin film transistor. The thin film transistor according to embodiments of the disclosure includes a light shielding layer and a buffer layer on the light shielding layer, an active layer on the buffer layer, and the active layer includes a channel region, a source region, and a drain region located on two sides of the channel region, the buffer layer being disposed such that light cannot be incident to the channel region via the buffer layer.

Abstract: The present disclosure provides a color filter substrate and a fabricating method thereof, and a display panel. The method includes: forming a black matrix on a base substrate; forming an auxiliary electrode on a side of the black matrix away from the base substrate, an orthographic projection of the black matrix on the base substrate covering an orthographic projection of the auxiliary electrode on the base substrate; and forming color filters on the base substrate and in a space defined by the black matrix on which the auxiliary electrode is formed.

Abstract: The present disclosure discloses a pixel circuit, a driving method thereof, a display panel, and a display device, which belong to the technical field of display. The pixel circuit includes a data writing sub-circuit, a compensation sub-circuit, a storage sub-circuit, and a driving sub-circuit. Since the compensation sub-circuit may output a first power signal to a first node, the storage sub-circuit may adjust the potential of a second node according to the potential of the first node.

Abstract: A thin-film transistor, method of manufacturing the same, and a display apparatus are provided. The thin-film transistor includes a first active layer, a source, a drain, a gate, and a second active layer, the source, the drain, the gate are disposed on the first active layer with spacing, the gate is located between the source and the drain, the second active layer is disposed on the gate, the source, and the drain, the source and the drain are both respectively connected to the first active layer and the second active layer, and the gate is respectively insulated from the first active layer, the second active layer, the source, and the drain. When a voltage is applied to the gate, the source and the drain may be conducting via the first and second active layer. Therefore, a larger current may flow between the source and the drain.

Abstract: The present disclosure provides an array substrate, a preparation method thereof and a related device. The array substrate includes a plurality of sub-pixel areas, each of the plurality of sub-pixel areas includes a pixel drive circuit and a photo compensation circuit arranged above a substrate, the pixel drive circuit includes a pixel storage capacitor coupled with a drive transistor, and the photo compensation circuit includes a photosensitive storage capacitor coupled with a photosensitive device; and the pixel storage capacitor and the photosensitive storage capacitor are arranged in a laminated manner, and the pixel storage capacitor and the photosensitive storage capacitor share a same electrode plate.