Patents by Inventor Guoying Yi

Guoying Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10396582
    Abstract: A battery charging system includes a master charger that receives a supply voltage, outputs a master charging current based on the supply voltage, and selectively outputs a slave charger control signal. At least one slave charger receives the slave charger control signal from the master charger, receives the supply voltage, and selectively outputs a slave charging current based on the slave charger control signal and the supply voltage.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: August 27, 2019
    Assignee: Maxim Integrated Products, Inc.
    Inventors: Guoying Yi, Rudy Kurniawan, Yayue Zhang, Sungil Ha, Haitao Hu, Guang Zhang, John Hu, Chin Boon Huam, Jia Hu
  • Publication number: 20170005501
    Abstract: A battery charging system includes a master charger that receives a supply voltage, outputs a master charging current based on the supply voltage, and selectively outputs a slave charger control signal. At least one slave charger receives the slave charger control signal from the master charger, receives the supply voltage, and selectively outputs a slave charging current based on the slave charger control signal and the supply voltage.
    Type: Application
    Filed: June 30, 2016
    Publication date: January 5, 2017
    Inventors: Guoying YI, Rudy KURNIAWAN, Yayue ZHANG, Sungil HA, Haitao HU, Guang ZHANG, John HU, Chin Boon HUAM, Jia HU
  • Patent number: 9018917
    Abstract: A driving circuit for an N-channel Metal Oxide Semiconductor (NMOS) transistor can include a charge pump unit and a driver coupled to the charge pump. The charge pump can receive a source voltage and output an output voltage higher than the source voltage, where the source voltage is applied to a source terminal of the NMOS transistor. The driver receives the output voltage of the charge pump unit and converts the output voltage to a driving voltage operable for conducting the NMOS transistor.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: April 28, 2015
    Assignee: O2Micro, Inc.
    Inventors: Marian Niculae, Alexandru Hartular, Dan Simion, Guoying Yi
  • Patent number: 8450977
    Abstract: A driving circuit for an N-channel Metal Oxide Semiconductor (NMOS) transistor can include a charge pump unit and a driver coupled to the charge pump. The charge pump can receive a source voltage and output an output voltage higher than the source voltage, where the source voltage is applied to a source terminal of the NMOS transistor. The driver receives the output voltage of the charge pump unit and converts the output voltage to a driving voltage operable for conducting the NMOS transistor.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: May 28, 2013
    Assignee: O2Micro, Inc.
    Inventors: Marian Niculae, Alexandru Hartular, Dan Simion, Guoying Yi
  • Publication number: 20090160500
    Abstract: A driving circuit for an N-channel Metal Oxide Semiconductor (NMOS) transistor can include a charge pump unit and a driver coupled to the charge pump. The charge pump can receive a source voltage and output an output voltage higher than the source voltage, where the source voltage is applied to a source terminal of the NMOS transistor. The driver receives the output voltage of the charge pump unit and converts the output voltage to a driving voltage operable for conducting the NMOS transistor.
    Type: Application
    Filed: December 17, 2008
    Publication date: June 25, 2009
    Inventors: Marian Niculae, Alexandru Hartular, Dan Simion, Guoying Yi