Patents by Inventor Guozhe WEN

Guozhe WEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10692432
    Abstract: The present disclosure provides a pixel driving circuit, a driving method thereof, and a layout structure of a transistor. The pixel driving circuit includes a storage capacitor, a first to a seventh switching transistor, a first driving transistor, a second driving transistor, and an organic light emitting diode. The layout structure includes a circuit node and an active layer connected to the circuit node; the active layer includes: a first active layer, a second active layer, and a third active layer; a first source, a drain and a second source connected to the first, the second and the third active layer, respectively; a first gate, a second gate, and a third gate corresponding to the first, the second, and the third active layer respectively; and a gate pattern composed of the first gate, the second gate, and the third gate being located above the circuit node and the active layer.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: June 23, 2020
    Assignee: KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD.
    Inventors: Lu Zhang, Guozhe Wen, Zhenzhen Han, Xiujian Zhu
  • Publication number: 20190189055
    Abstract: The present disclosure provides a pixel driving circuit, a driving method thereof, and a layout structure of a transistor. The pixel driving circuit includes a storage capacitor, a first to a seventh switching transistor, a first driving transistor, a second driving transistor, and an organic light emitting diode. The layout structure includes a circuit node and an active layer connected to the circuit node; the active layer includes: a first active layer, a second active layer, and a third active layer; a first source, a drain and a second source connected to the first, the second and the third active layer, respectively; a first gate, a second gate, and a third gate corresponding to the first, the second and the third active layer respectively; and a gate pattern composed of the first gate, the second gate, and the third gate being located above the circuit node and the active layer.
    Type: Application
    Filed: February 14, 2018
    Publication date: June 20, 2019
    Applicant: KunShan Go-Visionox Opto-Electronics Co., Ltd.
    Inventors: Lu ZHANG, Guozhe WEN, Zhenzhen HAN, Xiujian ZHU