Abstract: A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.

Abstract: A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.

Abstract: A stacked semiconductor device is provided, including a first semiconductor structure, a second semiconductor structure and a bonding structure disposed between the first and second semiconductor structures. The first semiconductor structure and the second semiconductor structure include first conductive pillars and second conductive pillars, respectively. The first semiconductor structure is stacked above the second semiconductor structure. The bonding structure contacts the first conductive pillars and the second conductive pillars, wherein the bonding structure comprises conductive paths for electrically connecting the first conductive pillars and the second conductive pillars.