Patents by Inventor Guqiao Ding
Guqiao Ding has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240069027Abstract: A use of nitrogen-doped carbon fluorescent quantum dots in preparation of aerobic glycolysis detection products is provided. The carbon-nitrogen fluorescent quantum dots are selected from one or more of C3N4 quantum dots, C2N quantum dots, and C3N quantum dots. The aerobic glycolysis detection products are reagents, based on a final volume of the reagents, the reagents comprise the carbon-nitrogen fluorescent quantum dots with a final concentration of 1 ?g/mL-1 mg/mL. The present disclosure realizes fluorescent labeling of NAD+ in living cells using the carbon-nitrogen fluorescent quantum dots, thus achieving fluorescent labeling and imaging of cells having aerobic glycolysis, which has the advantages of low cost, high efficiency, rapidity, and high accuracy.Type: ApplicationFiled: December 28, 2021Publication date: February 29, 2024Applicants: SHANGHAI NINTH PEOPLE'S HOSPITAL, SHANGHAI JIAOTONG UNIVERSITY SCHOOL OF MEDICINE, SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: JIPENG LI, SIWEI YANG, GUQIAO DING, HUIFANG ZHOU, XIANQUN FAN
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Patent number: 10017878Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.Type: GrantFiled: March 26, 2015Date of Patent: July 10, 2018Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Haomin Wang, Shujie Tang, Guangyuan Lu, Tianru Wu, Da Jiang, Guqiao Ding, Xuefu Zhang, Hong Xie, Xiaoming Xie, Mianheng Jiang
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Publication number: 20180002831Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.Type: ApplicationFiled: March 26, 2015Publication date: January 4, 2018Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: HAOMIN WANG, SHUJIE TANG, GUANGYUAN LU, TIANRU WU, DA JIANG, GUQIAO DING, XUEFU ZHANG, HONG XIE, XIAOMING XIE, MIANHENG JIANG
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Patent number: 9850571Abstract: The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.Type: GrantFiled: July 3, 2012Date of Patent: December 26, 2017Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Shumin Wang, Qian Gong, Xiaoming Xie, Hailong Wang, Zengfeng Di, Guqiao Ding, Qingbo Liu
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Patent number: 9328413Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.Type: GrantFiled: August 5, 2011Date of Patent: May 3, 2016Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Shujie Tang, Guqiao Ding, Xiaoming Xie, Ji Chen, Chen Wang, Mianheng Jiang
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Publication number: 20150292110Abstract: The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.Type: ApplicationFiled: July 3, 2012Publication date: October 15, 2015Inventors: Shumin Wang, Qian Gong, Xiaoming Xie, Hailong Wang, Zengfeng Di, Guqiao Ding, Qingbo Liu
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Publication number: 20130078424Abstract: The present invention provides a hexagonal boron nitride (hBN) substrate with a monatomic layer step and a preparation method thereof, where a surface of the hBN substrate is cleaved to obtain a fresh cleavage plane, and then hBN is etched by using hydrogen at a high temperature to obtain a controllable and regular monatomic layer step. The present invention utilizes an anisotropic etching effect of hydrogen on the hBN and controls an etching rate and degree of the etching by adjusting a hydrogen proportion, the annealing temperature, and the annealing time, so as to achieve the objective of etching the regular monatomic layer step. The preparation process is compatible with the process of preparing graphene through a chemical vapor deposition (CVD) method, and is applicable to preparation of a graphene nanoribbon. The present invention is mainly applied to new graphene electronic devices.Type: ApplicationFiled: August 5, 2011Publication date: March 28, 2013Inventors: Guqiao Ding, Shujie Tang, Xiaoming Xie, Mianheng Jiang
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Publication number: 20130022813Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.Type: ApplicationFiled: August 5, 2011Publication date: January 24, 2013Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMYInventors: Shujie Tang, Guqiao Ding, Xiaoming Xie, Ji Chen, Chen Wang, Mianheng Jiang