Abstract: A test structure for polymer characterization over a wide frequency range, temperature range and under an applied DC electric field is disclosed. A high resistivity silicon substrate is topped by an adhesion layer. A polymer thin-film is deposited on a patterned metal1 layer which is deposited on top of the adhesion layer. A top metal2 layer is deposited on the polymer thin-film and patterned to form a CPW transmission line. A single bias voltage is applied to the center conductor of the CPW transmission line on metal2 and influences dielectric properties of the polymer. The dielectric permittivity and the loss-tangent of the polymer can be derived as functions of electric field and temperature by measuring the swept frequency scattering parameters and matching the experimental frequency response to the modeled frequency response. The electrical conductance properties of the polymer can be accurately characterized using the test structure over a wide temperature range.

Abstract: A resonant sensor for detecting a specific environmental analyte is presented. The resonant sensor comprises a top conductive layer of two ground conductors and a center signal line, a bottom conductive layer of two ground lines shunted together by a shunt line and a sensing layer positioned between the top conductive layer and the bottom conductive layer. A capacitor is created by the overlap of the center signal line of the top conductive layer and the shunt line of the bottom conductive layer. Electrical properties of the sensing layer change in response to binding the specific environmental analyte with the sensing layer. The sensing layer can be an electro-optic polymer. Nanoparticles or carbon nanotubes can be dispersed within the sensing layer to bind with the specific environmental analyte. An integrated antenna can be incorporated into to sensor to receive radio frequencies for wireless, passive sensing.

Abstract: A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The concept of switching ON and OFF state is based on the dielectric tunability of the ferroelectric thin-films. At 0 V, the varactor has the highest capacitance value, resulting in the signal to be shunted to ground, thus isolating the output from the input.

Abstract: A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. In one embodiment, the varactor shunt switch can be used as passive sensor with the capability of being wireless.

Abstract: A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The varactor shunt switches can be used to create a bandpass filter and a tunable notch filter. The bandpass filter is implemented by cascading the switches, and the bandpass filter implemented through the use of a resonance circuit.

Abstract: Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.