Patents by Inventor Gustav Beckmann

Gustav Beckmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistor
    Patent number: 6583464
    Abstract: A memory cell array has memory cells in which there is an electrical connection between a polycrystalline semiconductor material of a capacitor electrode and a monocrystalline semiconductor region. Islands made of an amorphous material are disposed in a vicinity of the electrical connection between the polycrystalline semiconductor material and the monocrystalline semiconductor region. The islands are produced in particular by thermally breaking up an amorphous layer which has been formed by thermal oxidation. The memory cell array is in particular a DRAM array with a trench capacitor.
    Type: Grant
    Filed: November 30, 1998
    Date of Patent: June 24, 2003
    Assignee: Infineon Technologies AG
    Inventors: Emmerich Bertagnolli, Gustav Beckmann, Michael Bianco, Helmut Klose
  • Method for manufacturing a trench capacitor
    Patent number: 6528384
    Abstract: A method for manufacturing a trench capacitor uses a low-pressure gas phase doping for forming a buried plate as a capacitor plate. The use of the low-pressure gas phase doping reduces process costs and improves capacitor properties.
    Type: Grant
    Filed: March 19, 2001
    Date of Patent: March 4, 2003
    Assignee: Infineon Technologies AG
    Inventors: Gustav Beckmann, Moritz Haupt, Anke Krasemann, Alexandra Lamprecht, Dietmar Ottenwälder, Jens-Uwe Sachse, Martin Schrems
  • Method for manufacturing a trench capacitor
    Publication number: 20010055846
    Abstract: A method for manufacturing a trench capacitor uses a low-pressure gas phase doping for forming a buried plate as a capacitor plate. The use of the low-pressure gas phase doping reduces process costs and improves capacitor properties.
    Type: Application
    Filed: March 19, 2001
    Publication date: December 27, 2001
    Inventors: Gustav Beckmann, Moritz Haupt, Anke Krasemann, Alexandra Lamprecht, Dietmar Ottenwalder, Jens-Uwe Sachse, Martin Schrems