Patents by Inventor Guy A. Cohen

Guy A. Cohen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Processing for overcoming extreme topography
    Patent number: 8603846
    Abstract: A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: December 10, 2013
    Assignee: International Business Machines Corporation
    Inventors: Guy A. Cohen, Steven A. Cordes, Sherif A. Goma, Joanna Rosner, Jeannine M. Trewhella
  • PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY
    Publication number: 20110130005
    Abstract: A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.
    Type: Application
    Filed: February 10, 2011
    Publication date: June 2, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guy A. Cohen, Steven A. Cordes, Sherif A. Goma, Joanna Rosner, Jeannine M. Trewhella
  • Processing for overcoming extreme topography
    Patent number: 7915064
    Abstract: A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.
    Type: Grant
    Filed: August 10, 2009
    Date of Patent: March 29, 2011
    Assignee: International Business Machines Corporation
    Inventors: Guy A. Cohen, Steven A. Cordes, Sherif A. Goma, Joanna Rosner, Jeannine M. Trewhella
  • PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY
    Publication number: 20090298292
    Abstract: A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.
    Type: Application
    Filed: August 10, 2009
    Publication date: December 3, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guy A. Cohen, Steven A. Cordes, Sherif A. Goma, Joanna Rosner, Jeannine M. Trewhella