Abstract: The invention relates to a structure adapted for the formation of solar cells, comprising the following successive elements, namely: a sheet (1) of textured metal with crystal grains having an average size greater than 50 ?m, said sheet being adapted to form a rear face electrode of the cells; a diffusion barrier layer (2) having a thickness of between 0.2 and 2 ?m, made from an electrically conductive material with crystal grains having an average size greater than 50 ?m; and a doped multicrystalline silicon layer (3) having a thickness of between 30 and 100 ?m, with crystal grains having an average size greater than 50 to 100 ?m, in which the average diffusion length of the carriers is greater than 50 ?m.

Abstract: A method for preparing polycrystalline or single-crystal zinc oxide ZnO on a seed placed in an enclosure under a controlled atmosphere, by sublimation of a zinc oxide source placed in a crucible inside the enclosure and distant from the seed, by formation of gas species, transport of gas species, condensation of gas species on the seed, recombination of the ZnO at the surface of the seed, growth of polycrystalline or single-crystal ZnO on the seed, and cooling of the polycrystalline or single-crystal ZnO, wherein: the zinc oxide source is heated by induction at a temperature, a so-called sublimation temperature, from 900 to 1,400° C. under a pressure from 2.10?3 atmospheres to 0.