Abstract: A superconducting lead is presented for conducting electrical current to a superconducting device. the superconducting lead comprises first and second sections arranged one after the other along the lead, such that when the lead is brought to the superconducting device, the first and second sections are respectively proximal and distal sections with respect to the superconducting device, the proximal and distal sections being configured such that they differ from one another in at least one of heat conductance and working current.

Abstract: A substrate structure is provided for use in a superconductive device. The substrate structure has at least one of its two opposite surfaces configured for carrying at least one superconductive structure thereon. The substrate structure comprises a substrate made of a dielectric material composition and having a tape-like shape of a predetermined geometry characterized by a width-thickness aspect ratio of at least 10 and global planarity of said at least one surface defined by a surface roughness on a nanometric scale substantially not exceeding 1 nm rms.

Abstract: A substrate structure is provided for use in a superconductive device. The substrate structure has at least one of its two opposite surfaces configured for carrying at least one superconductive structure thereon. The substrate structure comprises a substrate made of a dielectric material composition and having a tape-like shape of a predetermined geometry characterized by a width-thickness aspect ratio of at least 10 and global planarity of said at least one surface defined by a surface roughness on a nanometric scale substantially not exceeding 1 nm rms.

Abstract: Described is a superconductive layered structure and an article including this superconductive layered structure on a substrate structure. The superconductive layered structure comprises a stack including at least one bi-layered assembly formed by first and second layers of similar superconducting material compositions, the second layer being superconductive at predetermined temperature condition, the first layer being a substantially thin layer and having a c lattice parameter selected in accordance with those of the substrate structure and the second layer, such that said first layer is non-superconductive at said predetermined temperature condition thereby allowing the second superconductive layer to be desirably thick to provide high critical current density of the superconductive layer.

Abstract: Described is a superconductive layered structure and an article including this superconductive layered structure on a substrate structure. The superconductive layered structure comprises a stack including at least one bi-layered assembly formed by first and second layers of similar superconducting material compositions, the second layer being superconductive at predetermined temperature condition, the first layer being a substantially thin layer and having a c lattice parameter selected in accordance with those of the substrate structure and the second layer, such that said first layer is non-superconductive at said predetermined temperature condition thereby allowing the second superconductive layer to be desirably thick to provide high critical current density of the superconductive layer.

Abstract: Described is an article including a sapphire substrate carrying a superconductive layer of a compound of the formula YBa2Cu3O7-x (YBCO), the layer having surface area of at least 10 cm2, and critical current of at least 100 A/cm width at a temperature of 77K or higher. In one exemplary embodiment, the thickness of the superconductive layer is between 10 nm and 50 nm. In another exemplary embodiment, the thickness of the superconductive layer is more than 600 nm. In preferred embodiment, an YSZ layer and a non-superconductive YBCO layer separate between the superconductive layer and the substrate.

Abstract: Described is an article including a sapphire substrate carrying a superconductive layer of a compound of the formula YBa2Cu3O7-x (YBCO), the layer having surface area of at least 10 cm2, and critical current of at least 100 A/cm width at a temperature of 77K or higher. In one exemplary embodiment, the thickness of the superconductive layer is between 10 nm and 50 nm. In another exemplary embodiment, the thickness of the superconductive layer is more than 600 nm. In preferred embodiment, an YSZ layer and a non-superconductive YBCO layer separate between the superconductive layer and the substrate.

Abstract: A method of depositing a heat reflecting coating on the inner surface of a tube comprises: introducing the tube into the second zone of a furnace having two temperature zones; injecting into the first zone a mixture of chemicals capable of reacting to form the coating material; simultaneously injecting into the first zone towards the second zone a plurality of jets of a carrier gas defining an annular array of jets around the first jet, and a further jet of a carrier gas also substantially parallel to the first jet but spaced closer thereto; controlling the temperature of the first zone to effect vaporization of the mixture in the first jet; and controlling the temperature of the second zone to effect the reaction of the vaporized materials of the mixture to form the coating material, and the deposition of the coating material on the surface of the tube in the second zone.

Abstract: Superconducting quantum interference devices (SQUID's) are described including two superconductor pathways connected together by a narrow bridge of a granular superconductor material having a high normal state electrical resistivity of about 10.sup..sup.-4 to 10.sup..sup.-2 ohm-cm. The latter material is preferably a granular superconductor including superconductor grains having a low normal state electrical resistivity embedded in a matrix of a material having a high normal state electrical resistivity.Also described is the use of such devices in linear applications, such as in a magnetometers, and digital applications, such as switches, flip-flops, and memory cells.