Abstract: A system and method are described, for use in cleaning of a vacuum chamber. The method comprising connecting a vacuum chamber to a plasma generating unit via a plasma connection port and connecting the vacuum chamber to a high vacuum pumping unit via a pumping port. A flow conductance through the plasma connection port to the vacuum chamber is controlled to limit passage of charged particles and cleaning substances produced in the plasma generating unit, to thereby maintain a working pressure inside the vacuum chamber while cleaning the vacuum chamber by said cleaning substances.

Abstract: A system and method are described, for use in cleaning of a vacuum chamber. The method comprising connecting a vacuum chamber to a plasma generating unit via a plasma connection port and connecting the vacuum chamber to a high vacuum pumping unit via a pumping port. A flow conductance through the plasma connection port to the vacuum chamber is controlled to limit passage of charged particles and cleaning substances produced in the plasma generating unit, to thereby maintain a working pressure inside the vacuum chamber while cleaning the vacuum chamber by said cleaning substances.

Abstract: A method and system for inspecting an inspected object. The system includes: a detector adapted to detect charged particles scattered from a sample; a magnetic lens adapted to generate a magnetic field such as to direct a charge particle beam towards a sample and an first electrode positioned very close to an inspected object, wherein the first electrode comprises a very thin portion that defines a narrow aperture through which the charged particle beam can propagate.

Abstract: A method and system for inspecting an inspected object. The system includes: a detector adapted to detect charged particles scattered from a sample; a magnetic lens adapted to generate a magnetic field such as to direct a charge particle beam towards a sample and an first electrode positioned very close to an inspected object, wherein the first electrode comprises a very thin portion that defines a narrow aperture through which the charged particle beam can propagate.

Abstract: Wafer supporting apparatus, including an electrostatic chuck for supporting the wafer. The apparatus further includes an electrostatic shield which is positioned in proximity to the chuck and the wafer, and a voltage source which is coupled to apply an electric field between the chuck and the wafer. The voltage source applies one or more potentials to the electrostatic shield so as to prevent penetration of particles to the wafer.

Abstract: Wafer supporting apparatus, including an electrostatic chuck for supporting the wafer. The apparatus further includes an electrostatic shield which is positioned in proximity to the chuck and the wafer, and a voltage source which is coupled to apply an electric field between the chuck and the wafer. The voltage source applies one or more potentials to the electrostatic shield so as to prevent penetration of particles to the wafer.

Abstract: A device that produces an electron beam with high optical quality for processing a sample, is presented. The optical quality is manifested by very high brightness and low energy spread. The device includes an electron source device comprising an electrode in the form of a shaped first layer, preferably in the form of a conducting crater carrying at least one nanotube, and an extracting electrode, which is formed with at least one aperture and is insulated from the firs layer. The source can be used in any column that requires such properties. The column according to the invention may be a full size or a miniature electron microscope, a lithography tool, a tool used for direct writing of wafers or a field emission display.