Abstract: A method for producing a vertical component comprising with the basis of a III-N material, comprising providing platelets made of the III-N material obtained by epitaxy on pads, the platelets comprise at least first and second layers doped and stacked on one another in a vertical direction. The method further includes the production of a first electrode and the production of a second electrode located on the platelet and configured such that a current passing from one electrode to the other passes through at least the second layer in all of its thickness, the thickness being taken in the vertical direction.

Abstract: A method for obtaining at least one nitride layer based upon a III-N material includes the successive steps of providing a stack having a support substrate and a plurality of pads, each pad including at least one basal section and one germination section carried by the basal section; modifying the basal section so as to form a modified basal section having a lower rigidity that the basal section before modification; and epitaxially growing a crystallite from the top of at least some of the pads of an assembly and continuing the epitaxial growth so as to form the nitride layer on pads on the assembly.

Abstract: A method for obtaining mesas that are made at least in part of a nitride (N), the method includes providing a stack comprising a substrate and at least the following layers disposed in succession from the substrate a first layer, referred to as the flow layer, and a second, crystalline layer, referred to as the crystalline layer; forming pads by etching the crystalline layer and at least one portion of the flow layer such that: —each pad includes at least: —a first section, referred to as the flow section, formed by at least one portion of the flow layer, and a second, crystalline section, referred to as the crystalline section, framed by the crystalline layer and overlying the flow section, the pads are distributed over the substrate so as to form a plurality of sets of pads; and epitaxially growing a crystallite on at least some of said pads and continuing the epitaxial growth of the crystallites until the crystallites carried by the adjacent pads of the same set coalesce.

Abstract: A method for producing at least one nitride layer includes providing a stack having a plurality of pillars extending from a substrate of the stack. Each pillar includes at least a crystalline section and a summit having a summit surface area The method also includes growing by epitaxy a crystallite from the summit of some the plurality of pillars and continuing the epitaxial growth of the crystallites until the crystallites supported by the pillars coalesce. The plurality of pillars includes at least one retention pillar and separation pillars. The pillars are configured so that once the nitride layer is formed, the at least one retention pillar retains the nitride layer and some of the separation pillars can fracture.

Abstract: A method for producing an optoelectronic device having nitride-based microLEDs includes providing an assembly having at least one growth substrate and a nitride structure, where the nitride structure has a semipolar nitride layer that includes an active stack and crystallites extending from facets of the growth substrate with a crystalline orientation {111} to the first face of the semipolar nitride layer and providing an integrated control circuit featuring electric connection pads. The assembly is placed on the integrated control circuit, the growth substrate and the crystallites are removed, and trenches are formed in the stack so as to delimit a plurality of islets, each islet being configured to form a microLED.

Abstract: A method making it possible to obtain, on an upper surface of a crystalline substrate, a semipolar layer of nitride material comprising any one from among gallium, aluminium or indium, the method comprises the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves which extend in a first direction, one of the two opposite facets exhibiting a crystal orientation; etching a plurality of parallel slices which extend in a second direction that has undergone a rotation with respect to the first direction of the grooves in such a way as to obtain individual facets exhibiting a crystal orientation; epitaxial growth of the material from the individual facets.

Abstract: A process for obtaining a nitride (N) layer preferably obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), may include: on a stack including a substrate and at least the following layers successively disposed from the substrate: a creep layer having a glass transition temperature, Tglass transition, and a crystalline layer, forming pads by etching the stack so that each pad includes at least a creep segment formed by at least a portion of the creep layer, and a crystalline segment formed by the crystalline layer; and growing by epitaxy a crystallite on each of the pads and continuing the epitaxial growth of the crystallites so as to form the nitride layer. The epitaxial growth may be carried out at a temperature Tepitaxy, such that Tepitaxy?k1×Tglass transition, with k1 being 0.8.

Abstract: A method is provided for obtaining a semi-polar nitride layer obtained from a gallium and nitrogen based material on an upper surface of a crystalline substrate of cubic symmetry, including: etching parallel grooves from the upper surface having two opposed inclined facets, one having a crystalline orientation <111>; forming a mask above the upper surface such that the facets having <111> orientation are not masked; and then forming the layer by epitaxial growth from the non-masked facets, including: a first epitaxial growth phase to form a seed in parallel grooves; interrupting the first phase when the seed has an inclined facet having a crystalline orientation 0001 and an upper facet having a crystalline semi-polar orientation 1011; a surface treatment step including modifying an upper portion of the seed to include silicon; and a second epitaxial growth phase from the inclined facet, continuing until coalescence of seeds of adjacent parallel grooves.

Abstract: The invention relates to a method of manufacturing at least one optoelectronic structure on a support substrate. In particular, this invention relates to manufacturing of an optoelectronic structure that has a plurality of coplanar light emitting diodes, and formed from a succession of light emitting stacks. Therefore this invention uses a cavity, the bottom of which has a staged profile, such that the formation of the succession of light emitting stacks reproduces the staged profile of the bottom of the cavity, on its exposed face. Performance of a step to level the succession of light emitting stacks relative to a reference level defined by the exposed surface portion vertically in line with the deepest step, then makes it possible to reveal a set of coplanar light emitting diodes.

Abstract: An optoelectronic device including three-dimensional semiconductor elements predominantly made of a first compound selected from among the group consisting of Compounds III-V, Compounds II-VI, and Compounds IV. Each semiconductor element defines, optionally with insulating portions partially covering said semiconductor element, at least one first surface including contiguous facets angled relative to each other. The optoelectronic device includes quantum dots at least some of the seams between the facets. The quantum dots are predominantly made of a mixture of the first compound and an additional element and are suitable for emitting or receiving a first electromagnetic radiation at a first wavelength.

Abstract: A process allowing at least one semipolar layer of nitride to be obtained, which layer is obtained from a least one among gallium, indium and aluminum on a top surface of a single-crystal layer based on silicon, wherein the process comprises the following steps: etching, from the top surface of the single-crystal layer, a plurality of parallel grooves comprising at least two opposite inclined facets, at least one of two opposite facets having a crystal orientation; masking the top surface of the single-crystal layer such that the facets having a crystal orientation are not masked; and epitaxial growth of the semipolar layer of nitride from the not masked facets; wherein the etching is carried out on a stack comprising the single-crystal layer and at least one stop layer that is surmounted by the single-crystal layer and wherein the etching etches the single-crystal layer selectively with respect to the stop layer so that the etching stops on contact with the stop layer.

Abstract: A subject matter of the invention relates to a method for obtaining at least one semi-polar layer (480) of nitride (N) on an upper surface of a crystalline layer (300), the method comprising the steps of: etching parallel grooves (320) starting from the upper surface of the crystalline substrate (300), each groove (320) comprising at least one facet (310) having a crystalline orientation {111}; forming a mask (331) such that the facets (311) opposite to said facets (310) having a crystalline orientation {111} are masked and that said facets (310) having a crystalline orientation {111} are not masked; at least one first epitaxial growth phase, carried out from said non-masked facets (310) in such a way as to form a seed (440); interruption of the first epitaxial growth phase when said seed (440) has an inclined facet (442) having a crystalline orientation (0001) and an upper facet (441) having a crystalline orientation (1011); a surface treatment step comprising a modification of an upper portion of the see

Abstract: A process allowing at least one semipolar layer of nitride to be obtained, which layer is obtained from a least one among gallium, indium and aluminum on a top surface of a single-crystal layer based on silicon, wherein the process comprises the following steps: etching, from the top surface of the single-crystal layer, a plurality of parallel grooves comprising at least two opposite inclined facets, at least one of two opposite facets having a crystal orientation; masking the top surface of the single-crystal layer such that the facets having a crystal orientation are not masked; and epitaxial growth of the semipolar layer of nitride from the not masked facets; wherein the etching is carried out on a stack comprising the single-crystal layer and at least one stop layer that is surmounted by the single-crystal layer and wherein the etching etches the single-crystal layer selectively with respect to the stop layer so that the etching stops on contact with the stop layer.

Abstract: An optoelectronic device including three-dimensional semiconductor elements predominantly made of a first compound selected from among the group consisting of Compounds III-V, Compounds II-VI, and Compounds IV. Each semiconductor element defines, optionally with insulating portions partially covering said semiconductor element, at least one first surface including contiguous facets angled relative to each other. The optoelectronic device includes quantum dots at least some of the seams between the facets. The quantum dots are predominantly made of a mixture of the first compound and an additional element and are suitable for emitting or receiving a first electromagnetic radiation at a first wavelength.

Abstract: A method making it possible to obtain, on an upper surface of a crystalline substrate, a semipolar layer of nitride material comprising any one from among gallium, aluminium or indium, the method comprises the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves which extend in a first direction, one of the two opposite facets exhibiting a crystal orientation; etching a plurality of parallel slices which extend in a second direction that has undergone a rotation with respect to the first direction of the grooves in such a way as to obtain individual facets exhibiting a crystal orientation; epitaxial growth of the material from the individual facets.

Abstract: A method for purifying an n-type ZnO and/or ZnMgO substrate to reduce or eliminate the residual extrinsic impurities including introducing a reactive species having strong chemical affinity for at least one of the residual extrinsic impurities, and/or being capable of creating crystalline defects, is introduced in at least one region of the substrate, the reactive species being P, and whereby at least one getter region capable of trapping the said residual extrinsic impurities and/or in which the residual extrinsic impurities are trapped is created in the substrate; then annealing the substrate to cause diffusion of the residual extrinsic impurities towards the getter region and/or to outside the getter region. A method for preparing a p-doped ZnO and/or ZnMgO substrate comprising purifying an n-type ZnO and/or ZnMgO substrate using the above purification method in which one or more reactive species are used not limited to phosphorus alone.

Abstract: A method for purifying an n-type ZnO and/or ZnMgO substrate to reduce or eliminate the residual extrinsic impurities of the substrate with a view to p-doping of at least are part of the substrate, wherein a reactive species having strong chemical affinity for at least one of the residual extrinsic impurities, and/or being capable of creating crystalline defects, is introduced in at least one region of the substrate, the said reactive species being P, and whereby at least one region called a getter region capable of trapping the said residual extrinsic impurities and/or in which the residual extrinsic impurities are trapped is created in the substrate; annealing of the substrate is then carried out to cause diffusion of the residual extrinsic impurities towards the getter region and/or to outside the getter region, preferably towards at least one surface of the substrate.

Abstract: An assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, the faces being located facing each other, at least one of the substrates having a surface topography. The method forms an intermediate layer including at least one burial layer on the face of the substrate or substrates having a surface topography to make it (them) compatible with molecular bonding of the faces of substrates to each other from a topographic point of view, resistivity and/or thickness of the intermediate layer being chosen to enable the local electrical bonds, brings the two faces into contact, the substrates positioned to create electrical bonds between areas on the first substrate and corresponding areas on the second substrate, and bonds the faces by molecular bonding.

Abstract: Method for passivating non-radiatives recombination centres of a ZnO specimen in which magnesium is deposited on at least one surface of the ZnO specimen, and annealing of the specimen on which magnesium is deposited is performed in an oxidizing atmosphere. ZnO specimen thus obtained.

Abstract: The invention relates to an assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, said faces being located facing each other, at least one of the substrates having a surface topography, characterised in that the method comprises steps consisting of: forming an intermediate layer comprising at least one burial layer on the face of the substrate or substrates having a surface topography to make it (them) compatible with molecular bonding of said faces of substrates to each other from a topographic point of view, the resistivity and/or thickness of the intermediate layer being chosen to enable said local electrical bonds, bringing the two faces into contact, the substrates being positioned so as to create electrical bonds between areas located on the first substrate and the corresponding areas located on the second substrate, bonding the faces of the first and second substrates by molecular bonding