Abstract: Thin film of quasicrystalline alloy having a thickness of between approximately 0.01 and 10 .mu.m comprising one or more quasicrystalline phases having a volume which represents at least 60% by volume of the quasicrystalline alloy, a quasicrystalline phase being either a quasicrystalline phase which exhibits rotational symmetries normally incompatible with a translational symmetry, i.e., symmetries with a 5-, 8-, 10- and 12-fold rotation axis, or an approximant phase or an approximant compound which is a true crystal, the approximant phase or compound having a crystallographic structure which remains compatible with the translational symmetry, but which has, in an electron diffraction photograph, diffraction patterns whose symmetry is close to that of 5-, 8-, 10- or 12-fold rotation axes; wherein the alloy has the following nominal composition, which is given in atomic percentages: Al.sub.a Re.sub.r Si.sub.s X.sub.d Mn.sub.m in which X represents at least one element chosen from B, C, P, S and Ge; 15.ltoreq.