Abstract: The invention relates to a cooling device for cooling a semiconductor component (1), in particular an optoelectronic semiconductor component, comprising at least partially first and second layers and a heal dissipation device (4), wherein said first and second layers are flatly placed on top of each other and one layer is provided, at least partially, with a structure for receiving said heat dissipation device (4).

Abstract: A bonding wire (1) includes a matrix material (2) and a filler (3) embedded in this matrix material (2), the coefficient of thermal expansion of the filler (3) being lower than the coefficient of thermal expansion of the matrix material (2), and the filler (3) content by weight amounting to at least 25% of the weight of the bonding wire (1). Also, a bonded connection between a bonding wire and a substrate may use such a bonding wire.

Abstract: At least one power semiconductor component is cooled by a flat, copper, plate-type hollow body conducting a coolant fluid. Components are fixed on one flat-sided surface of the hollow body and the other flat-sided surface includes two coolant fluid openings for introducing the coolant fluid into the hollow body and for evacuating the fluid therefrom. The other flat-sided surface is concave and elastically deformable between the coolant fluid openings. The concave other surface is attached to the even surface of a support in such a way that the concave surface and the even surface are pressed against each other by the elastically planar deformation of the concave surface and that the coolant fluid openings are sealed in a fluidproof manner by O-rings. A solid strut, which interconnects the two flat-sided surfaces is additionally configured in the hollow body. The cooling device may be used in a module or an assembly including a support and the cooling device or module.

Abstract: A bonding wire (1) includes a matrix material (2) and a filler (3) embedded in this matrix material (2), the coefficient of thermal expansion of the filler (3) being lower than the coefficient of thermal expansion of the matrix material (2), and the filler (3) content by weight amounting to at least 25% of the weight of the bonding wire (1). Also, a bonded connection between a bonding wire and a substrate is described.

Abstract: At least one power semiconductor component is cooled by a flat, copper, plate-type hollow body conducting a coolant fluid. Components are fixed on one flat-sided surface of the hollow body and the other flat-sided surface includes two coolant fluid openings for introducing the coolant fluid into the hollow body and for evacuating the fluid therefrom. The other flat-sided surface is concave and elastically deformable between the coolant fluid openings. The concave other surface is attached to the even surface of a support in such a way that the concave surface and the even surface are pressed against each other by the elastically planar deformation of the concave surface and that the coolant fluid openings are sealed in a fluidproof manner by O-rings. A solid strut, which interconnects the two flat-sided surfaces is additionally configured in the hollow body. The cooling device may be used in a module or an assembly including a support and the cooling device or module.

Abstract: The substrate for high-voltage modules has a ceramic later with a first main side and a second main side opposite to the first main side. The ceramic layer has a first dielectric constant. A top metal layer is disposed on the first main side and a bottom metal layer is disposed on the second main side. To reduce field tips, a dielectric layer with a second dielectric constant borders the top metal layer and is disposed on the first main side of the ceramic layer. The density of the field lines on the edges of the voltage-conducting elements is thus attenuated so that the dielectric constants of the ceramic layer and the dielectric layer match each other.

Abstract: A metallic-ceramic substrate having a ceramic layer and metal layers on both sides of the ceramic layer is provided with a high-impedance layer at the surface of the ceramic layer. The high-impedance layer is located adjacent to the metal layers. Therefore, the electrical field intensity at the edges of the metal layers is limited and an even distribution of the electrical potential at the surface of the ceramic layer is achieved. For example, the high-impedance layer may include a thin CrNi-layer, a doped Si-layer, an a—C:H-layer or a Ti-implantation.

Abstract: The substrate for high-voltage modules has a ceramic layer with a first main side and a second main side opposite to the first main side. The ceramic layer has a first dielectric constant. A top metal layer is disposed on the first main side and a bottom metal layer is disposed on the second main side. To reduce field tips, a dielectric layer with a second dielectric constant borders the top metal layer and is disposed on the first main side of the ceramic layer. The density of the field lines on the edges of the voltage-conducting elements is thus attenuated so that the dielectric constants of the ceramic layer and the dielectric layer match each other.

Abstract: A method for manufacturing a field effect transistor having source and drain regions asymmetrically arranged relative to the gate region. A strip-shaped auxiliary layer is applied in the region of the gate. A first and second spacer are laterally fashioned along an auxillary layer, the first spacer is covered with a resist mask and the second spacer is subsequently etched away. The source metallization and the drain metallization are then applied, and a planarizing passivation layer is applied therebetween. This is followed by the application of connecting metallizations for the source, drain and gate regions.

Abstract: A magnetic lens system for corpuscular radiation equipment operating in a vacuum, in particular, an objective lens system for electron microscopes, comprising a superconducting shield housing, in which are arranged, at one end, a single hollow cylindrical superconducting shielding device, wound with a lens coil, and at the other end, in front of the free end face of the shielding device, a vacuum chamber for accommodating an object to be examined, permitting the cavity to be relatively large, and detectors for radiation analysis to be arranged therein so that the lens system is therefore suitable for use in scanning electron microscopes.

Abstract: A magnetic lens arrangement for corpuscular radiation equipment working under a vacuum, in particular an objective lens for high voltage electron microscopes, which permits having objects to be examined disposed in a vacuum chamber at room temperature, is achieved by an arrangement which includes a vacuum chamber having a lens coil winding, a superconductive shielding device which is of cup-shaped design and encloses the winding, two superconductive shielding cylinders disposed one behind the other with mutual spacing enclosed by the winding, with a vacuum chamber for the object to be examined disposed in front of the open side of the shielding device and the first shielding cylinder.