Abstract: The disclosure concerns semiconductor lasers in which the current has to be localized, preferably in the emissive strip. In a laser having at least one emissive strip and a contact for current injection, the current is localized on the strip by means of an overdoped well that goes through the confinement layer with doping gradient. This confinement layer is doped to a level of 10.sup.18 at.cm.sup.-3 in the vicinity of the strip and to a level of 2.10.sup.17 at.cm.sup.-3 in the vicinity of the injection contact. The disclosed device can be applied to telecommunications and data processing by optical fibers.

Abstract: The disclosure concerns an integrated circuit which forms an electronic power device. This integrated circuit has, supported by a substrate, at least one array of lasers and at least one flat bar of reflectors. The reflectors send back the laser beams, emitted parallel to the substrate, perpendicularly to the substrate. The cleaved faces of the lasers are obtained by the sub-etching of the arrays, then through breaking by ultrasound.

Abstract: A device for optically coupling a light emitting diode and a radiation pickup such as an optical fiber. The light emitting diode element includes at least one emissive section within an active layer where a part of the light irradiation does not emerge from the diode element if it is emitted at an excessive angle of incidence. A lenticular element in the form of either a semi-cylindrical lens or a semi-toroidal lens is associated with the emissive section. In one form, the device includes a circular central lens and a plurality of semi-toroidal lens concentric with respect to the central lens and associated with annular emissive sections.

Abstract: A light emitting diode (LED) is provided which has light emission taking place through the surface of a window layer and which consist of at least one active layer between a substrate and a window layer. Under biassing, the active layer emits isotropic radiation of wave length .lambda.. The LED of the invention comprises a re-emitting layer which absorbs the part of the radiation which is emitted in the direction of the substrate and re-emits it isotropically with a wave length very close to that of the active layer. For that, the re-emitting layer is made from a material whose prohibited band height is very close to but less than that of the active layer. If the substrate is transparent, it may be situated between the emitting layer and the re-emitting layer.