Abstract: An aqueous solution for etching silicon dioxide and method of use are provided. The aqueous solution includes the anion F? in a concentration ranging from 2 to 4 mol/l and a cation of formula RR?R?R??N+ in a concentration ranging from 1.5 to 2 mol/l, wherein each of R, R?, R?, and R?? are independently selected from hydrogen and C1-5 alkyl chains with the proviso that the total number of carbon atoms in R, R?, R?, and R?? combined equals from 8 to 16.

Abstract: An aqueous solution for etching silicon dioxide and method of use are provided. The aqueous solution includes the anion F? in a concentration ranging from 2 to 4 mol/l and a cation of formula RR?R?R??N+ in a concentration ranging from 1.5 to 2 mol/l, wherein each of R, R?, R?, and R?? are independently selected from hydrogen and C1-5 alkyl chains with the proviso that the total number of carbon atoms in R, R?, R?, and R?? combined equals from 8 to 16.

Abstract: A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-? dielectric material preserving the characteristics of the low-?dielectric material includes: a)—providing a substrate comprising a hardened photoresist layer and a low-? dielectric material at least partially exposed; b)—forming C?C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)—breaking the C?C double bonds formed in step b) by reacting the hardened photoresist with ozone (O3) or a mixture of ozone (O3) and oxygen (O2) thereby fragmenting the hardened photoresist; and d)—removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

Abstract: A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-? dielectric material preserving the characteristics of the low-k dielectric material includes: a)—providing a substrate comprising a hardened photoresist layer and a low-? dielectric material at least partially exposed; b)—forming C?C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)—breaking the C?C double bonds formed in step b) by reacting the hardened photoresist with ozone (O3) or a mixture of ozone (O3) and oxygen (O2) thereby fragmenting the hardened photoresist; and d)—removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

Abstract: A method for removing a resist layer from a substrate is described. The method for removing a resist layer from a substrate, wherein the resist layer comprises bulk resist contacting the substrate and a resist crust being present at the outer surface of the resist layer, includes providing at least locally a liquid organic solvent on the resist layer contacting the substrate, for which the bulk resist is soluble in the organic solvent and the resist crust is substantially insoluble in the organic solvent. The method further includes stripping the resist layer from the substrate by providing megasonic energy to the organic solvent, creating organic solvent cavitations for fracturing the resist crust, and dissolving the bulk resist in the organic solvent.

Abstract: The present invention is related to a method for reducing the metal contamination on a surface of a semiconductor substrate wherein said substrate is submitted to a wet cleaning or rinsing process in a solution capable of oxidising said surface and containing a substance strongly dissociating in said solution whereby creating an amount of ions of at least one species in said solution, at least one of the ion species being such that the ions of the species are binding to the oxidised surface in such a way that said amount of ions is substantially reducing the amount of metal ions bound to the oxidised surface. Wet treatments such as rinsing, cleaning, in wet benches, batches and single wafer wet-cleaning equipment and single or double-side cleaning or etching applications can use the method of the present invention.

Abstract: The present invention discloses a method for removing silicon nitride from a substrate, characterised in that it comprises contacting said substrate with a molten halogen salt.