Abstract: The present invention relates to an apparatus and a method for inspecting battery cells for automation of total inspection. To this end, the present invention is configured such that test objects are sequentially stacked on a test object casing provided on an upper portion of a mounting stage of a main stage, images of the test objects are obtained by radiography after the test object casing is moved to a test object inspection unit, and the test objects stacked on the test object casing are unloaded to the outside after the images are obtained. Accordingly, the present invention enables total inspection to be performed on battery cells, which are the test objects, in order to quickly divide good and defective products, and solves a delay of a flow rate caused by X-ray inspection of the test object inspection unit in order to improve productivity and efficiency.

Abstract: The present invention relates to an apparatus and a method for inspecting battery cells for automation of total inspection. To this end, the present invention is configured such that test objects are sequentially stacked on a test object casing provided on an upper portion of a mounting stage of a main stage, images of the test objects are obtained by radiography after the test object casing is moved to a test object inspection unit, and the test objects stacked on the test object casing are unloaded to the outside after the images are obtained. Accordingly, the present invention enables total inspection to be performed on battery cells, which are the test objects, in order to quickly divide good and defective products, and solves a delay of a flow rate caused by X-ray inspection of the test object inspection unit in order to improve productivity and efficiency.

Abstract: Disclosed herein is an image capture apparatus. The image capture apparatus includes an image sensor, a cooler placed at one side of the image sensor and cooling the image sensor, and a moving device placed at one side of the cooler and moving the image sensor and the cooler.

Abstract: Disclosed herein is an image capture apparatus. The image capture apparatus includes an image sensor, a cooler placed at one side of the image sensor and cooling the image sensor, and a moving device placed at one side of the cooler and moving the image sensor and the cooler.

Abstract: A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.

Abstract: A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.

Abstract: A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.

Abstract: A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.

Abstract: A header-replaceable hybrid waveguide sensor comprises a header coupling section including a dielectric layer having an optical signal input section and an optical signal output section formed in one end thereof, the dielectric layer having two lines of protrusions formed on the upper surface thereof; and a polymer layer formed on and under the dielectric layer; and a sensor header including a dielectric layer having a protrusion formed on the upper surface thereof and a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed in a portion corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on the upper surface of the dielectric layer exposed by the opening.

Abstract: An optical waveguide includes a linear metallic thin film having a light delivering unit coupled to one end thereof, through which light is incident; and at least more than two dielectric layers surrounding the metallic thin film. In the optical waveguide, an effective refractive index and a propagation loss in the metallic thin film is reduced so that long-range light transmission is realized. Further, a loss of light caused by the coupling to optical fiber, which is coupled to one end of the metallic thin film, is simultaneously reduced.

Abstract: A hybrid waveguide sensor comprises a dielectric layer having one optical signal input section formed in one end thereof and one optical signal output section formed in the other end thereof, the dielectric layer having a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed to expose a portion of the dielectric layer corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on a portion of the dielectric layer corresponding to the thin metal film exposed by the opening.

Abstract: An optical waveguide for transmitting a surface plasmon-polariton wave includes a metallic thin film formed to have a triangle-shaped cross-section; and a pair of first and second dielectric layers coupled to each other such that the opposing surfaces thereof come in contact with each other, with the metallic thin film interposed therebetween, the first and second dielectric layers having a different refractive index and a positive or negative dielectric constant.

Abstract: A hybrid waveguide sensor comprises a dielectric layer having one optical signal input section formed in one end thereof and one optical signal output section formed in the other end thereof, the dielectric layer having a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed to expose a portion of the dielectric layer corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on a portion of the dielectric layer corresponding to the thin metal film exposed by the opening.

Abstract: A header-replaceable hybrid waveguide sensor comprises a header coupling section including a dielectric layer having an optical signal input section and an optical signal output section formed in one end thereof, the dielectric layer having two lines of protrusions formed on the upper surface thereof; and a polymer layer formed on and under the dielectric layer; and a sensor header including a dielectric layer having a protrusion formed on the upper surface thereof and a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed in a portion corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on the upper surface of the dielectric layer exposed by the opening.

Abstract: An optical waveguide comprises a linear metallic thin film having a light delivering unit coupled to one end thereof, through which light is incident; and at least more than two dielectric layers surrounding the metallic thin film. In the optical waveguide, an effective refractive index and a propagation loss in the metallic thin film is reduced so that long-range light transmission is realized. Further, a loss of light caused by the coupling to optical fiber, which is coupled to one end of the metallic thin film, is simultaneously reduced.

Abstract: The invention relates to a fabrication of an integrated optical isolator using a Multi-Mode Interference (MMI) structure and a cladding layer comprising magneto-optical material, which remove needless reflection generated in the course of light propagation and make short length integration possible. Thus, the invention uses nonreciprocal phase shift effect that optical characteristics are altered according to the direction of light propagation. In order to fabricate a light waveguide optical isolator, an input light should be separated into two light waveguides having the same power. That is, for the purpose of reducing the length of optical isolator device, the waveguide length needed to separate an input light into two light waveguides should be shortened. Since the light waveguide length of MMI structure is much shorter than the length of Mach-Zehnder light waveguide for separating an input light into two waveguides, the length of optical isolator device using MMI structure can be reduced.

Abstract: A semiconductor magneto-optical integrated optical isolator is realized with a Mach-Zehnder integrated optical isolator in which a cladding and a guiding layer of light waveguide are composed of magnetic material. Here, it uses nonreciprocal phase shift created when light propagation direction is changed. The fundamental element deriving this nonreciprocal phase shift is the Faraday rotation of magnetic material. Therefore, it is essential to have large Faraday rotation in order to fabricate a short length integrated optical isolator. However, since magnetic material of bulk state does not have large Faraday rotation, there need the length of several mm units for fabricating an isolator. The invention is to realize an integrated optical isolator using magneto-optical crystal in which magneto-optical material and dielectric substance have periodic structure.