Abstract: Provided are a two-terminal switching element having a bidirectional switching characteristic, a resistive memory cross-point array including the same, and methods for manufacturing the two-terminal switching element and the cross-point resistive memory array. The two-terminal switching element includes a first electrode and a second electrode. A pair of first conductive metal oxide semiconductor layers electrically connected to the first electrode and the second electrode, respectively, is provided. A second conductive metal oxide semiconductor layer is disposed between the first conductive metal oxide semiconductor layers. Therefore, the two-terminal switching element can show a symmetrical and bidirectional switching characteristic.

Abstract: Provided are a two-terminal switching element having a bidirectional switching characteristic, a resistive memory cross-point array including the same, and methods for manufacturing the two-terminal switching element and the cross-point resistive memory array. The two-terminal switching element includes a first electrode and a second electrode. A pair of first conductive metal oxide semiconductor layers electrically connected to the first electrode and the second electrode, respectively, is provided. A second conductive metal oxide semiconductor layer is disposed between the first conductive metal oxide semiconductor layers. Therefore, the two-terminal switching element can show a symmetrical and bidirectional switching characteristic.

Abstract: A complementary resistive switching (CRS) memory device having a three-dimensional crossbar-point vertical multi-layer structure is provided. The CRS memory device having a three-dimensional structure comprises: a conductive pillar; a plurality of CRS memory unit devices surrounding an outer circumferential surface of the conductive pillar and positioned to be spaced apart from each other; and a plurality of word electrode lines making contact with outer circumferential surfaces of the CRS memory unit devices and positioned so as to intersect the conductive pillar, wherein the CRS memory unit devices comprise: a first oxide semiconductor film surrounding the outer circumferential surface of the conductive pillar; a conductive film surrounding the first oxide semiconductor film; and a second oxide semiconductor film surrounding the conductive film.

Abstract: Provided are a two-terminal switching element having a bidirectional switching characteristic, a resistive memory cross-point array including the same, and methods for manufacturing the two-terminal switching element and the cross-point resistive memory array. The two-terminal switching element includes a first electrode and a second electrode. A pair of first conductive metal oxide semiconductor layers electrically connected to the first electrode and the second electrode, respectively, is provided. A second conductive metal oxide semiconductor layer is disposed between the first conductive metal oxide semiconductor layers. Therefore, the two-terminal switching element can show a symmetrical and bidirectional switching characteristic.