Abstract: A method for producing an at least partially transparent device is provided, including producing, on a first substrate, first and second separation layers one against the other; producing, on the second separation layer, an at least partially transparent functional layer; making the functional layer integral with a second at least partially transparent substrate; forming a mechanical separation at an interface between the separation layers; removing the second separation layer; producing a first at least partially transparent electrode layer on the functional layer; where the materials of the stack are chosen such that the interface between the separation layers corresponds to that, among all the interfaces of the stack, having the lowest adherence force.

Abstract: A method for producing a piezoelectric transducer device is provided, including a membrane including at least one silicon and/or silicon nitride layer; a piezoelectric layer including at least one piezoelectric material with crystalline perovskite structure and arranged on the membrane; first and second electrodes electrically in contact with the piezoelectric layer; and in which the piezoelectric layer is in direct contact with the silicon and/or silicon nitride layer, or in which the piezoelectric layer is in contact with the silicon and/or silicon nitride layer solely through one or more metal layers.

Abstract: The invention relates to a method for transferring at least one layer of material, comprising: producing first and second separating layers (108, 110), one against the other, on a first substrate (104); producing the layer to be transferred on the second separating layer (110); securing the layer to be transferred to a second substrate (106), forming a stack of different materials; and performing mechanical separation at the interface between the separating layers; in which the materials of the stack are such that the interface between the first and second separating layers has the weakest adhesion force, and the method comprises a step reducing an initial adhesion force of the interface between the first and second separating layers.

Abstract: A structure for the testing of an electronic circuit for addressing a matrix of cells including a plurality of blocks containing at least one first material, piezoelectric and/or dielectric, the dielectric properties of which can be modulated according to the intensity of an electric field that is applied to it, at least one separation region between the blocks, the structure further including a shared electrode connected to a first end of the blocks containing the first material, a second end of the blocks containing the first material being arranged with respect to a face of the structure called “contact face”, so that when the contact face is disposed on the addressing circuit, the second end of the blocks is connected to at least one conductive stud of the addressing circuit.

Abstract: A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.

Abstract: Pyroelectric detection device, including at least: a substrate; a membrane arranged on the substrate; a pyroelectric detection element arranged on the membrane or forming at least one part of the membrane, and including at least one portion of pyroelectric material arranged between first and second electrodes; a cavity passing through the substrate, emerging opposite a part of the membrane which forms a bottom wall of the cavity, and including side edges formed by the substrate; an element for stiffening the membrane arranged in the cavity, partially filling the cavity, made integral with the side edges of the cavity at at least two distinct anchoring regions, and arranged against the membrane.

Abstract: A semiconductor device includes a substrate; a semiconductor structure arranged on the substrate, the semiconductor structure including at least one first semiconductor layer; an insulator layer arranged on the semiconductor structure; a field plate covering a part of the insulator layer, wherein the insulator layer includes a non-linear dielectric material having a permittivity that decreases as an electric field traversing the dielectric material increases.

Abstract: The invention relates to a method for transferring at least one layer of material, comprising: producing first and second separating layers (108, 110), one against the other, on a first substrate (104); producing the layer to be transferred on the second separating layer (110); securing the layer to be transferred to a second substrate (106), forming a stack of different materials; and performing mechanical separation at the interface between the separating layers; in which the materials of the stack are such that the interface between the first and second separating layers has the weakest adhesion force, and the method comprises a step reducing an initial adhesion force of the interface between the first and second separating layers.

Abstract: Pyroelectric detection device, comprising at least: a suspended membrane; a pyroelectric detection element located on the suspended membrane and comprising at least one portion of pyroelectric material located between first and second electrodes, the first electrode being located between said at least one portion of pyroelectric material and the suspended membrane; and in which the membrane and the pyroelectric detection element are subjected to a higher compression stress than a limiting buckling stress of the suspended membrane and the pyroelectric detection element and together form a bistable structure.

Abstract: This invention relates to an electromechanical actuator comprising a support and a deformable element comprising a portion anchored to at least one anchoring zone of the support and mobile portion, the deformable element comprising an electro-active layer, a reference electrode arranged on a first face of the electro-active layer an actuating electrode arranged on a second face, opposite the first face, of the electro-active layer comprises a capacitive device for measuring the deformation of the deformable element, said device being at least partially formed by a capacitive stack comprising a measuring electrode on the second face of the electro-active layer, a measuring portion of the reference electrode located facing the measuring electrode, and a portion of the electro-active layer inserted between the measuring electrode.

Abstract: A semiconductor device includes a substrate; a semiconductor structure arranged on the substrate, the semiconductor structure including at least one first semiconductor layer; an insulator layer arranged on the semiconductor structure; a field plate covering a part of the insulator layer, wherein the insulator layer includes a non-linear dielectric material having a permittivity that decreases as an electric field traversing the dielectric material increases.

Abstract: Pyroelectric detection device, including at least: a substrate; a membrane arranged on the substrate; a pyroelectric detection element arranged on the membrane or forming at least one part of the membrane, and including at least one portion of pyroelectric material arranged between first and second electrodes; a cavity passing through the substrate, emerging opposite a part of the membrane which forms a bottom wall of the cavity, and including side edges formed by the substrate; an element for stiffening the membrane arranged in the cavity, partially filling the cavity, made integral with the side edges of the cavity at at least two distinct anchoring regions, and arranged against the membrane.

Abstract: Pyroelectric detection device, comprising at least: a suspended membrane; a pyroelectric detection element located on the suspended membrane and comprising at least one portion of pyroelectric material located between first and second electrodes, the first electrode being located between said at least one portion of pyroelectric material and the suspended membrane; and in which the membrane and the pyroelectric detection element are subjected to a higher compression stress than a limiting buckling stress of the suspended membrane and the pyroelectric detection element and together form a bistable structure.

Abstract: A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.

Abstract: A method for producing a piezoelectric transducer device is provided, including a membrane including at least one silicon and/or silicon nitride layer; a piezoelectric layer including at least one piezoelectric material with crystalline perovskite structure and arranged on the membrane; first and second electrodes electrically in contact with the piezoelectric layer; and in which the piezoelectric layer is in direct contact with the silicon and/or silicon nitride layer, or in which the piezoelectric layer is in contact with the silicon and/or silicon nitride layer solely through one or more metal layers.

Abstract: A method for producing an at least partially transparent device is provided, including producing, on a first substrate, first and second separation layers one against the other; producing, on the second separation layer, an at least partially transparent functional layer; making the functional layer integral with a second at least partially transparent substrate; forming a mechanical separation at an interface between the separation layers; removing the second separation layer; producing a first at least partially transparent electrode layer on the functional layer; where the materials of the stack are chosen such that the interface between the separation layers corresponds to that, among all the interfaces of the stack, having the lowest adherence force.

Abstract: This invention relates to an electromechanical actuator comprising a support and a deformable element comprising a portion anchored to at least one anchoring zone of the support and mobile portion, the deformable element comprising an electro-active layer, a reference electrode arranged on a first face of the electro-active layer an actuating electrode arranged on a second face, opposite the first face, of the electro-active layer comprises a capacitive device for measuring the deformation of the deformable element, said device being at least partially formed by a capacitive stack comprising a measuring electrode on the second face of the electro-active layer, a measuring portion of the reference electrode located facing the measuring electrode, and a portion of the electro-active layer inserted between the measuring electrode.

Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.

Abstract: A method and an electrical device with superimposed layers in an alternation of conductive layers and insulating layers. A mesa-type structure is formed, leaving for at least one conductive layer, an uncovered peripheral portion accessible for connection. In this portion, an electrically insulating pattern is configured in order to mark out an electrically insulated area located in the peripheral portion of said at least one of the electrically conductive layers. Application to electrical capacitances and redistribution layers for microelectronic devices.

Abstract: A method and an electrical device with superimposed layers in an alternation of conductive layers and insulating layers. A mesa-type structure is formed, leaving for at least one conductive layer, an uncovered peripheral portion accessible for connection. In this portion, an electrically insulating pattern is configured in order to mark out an electrically insulated area located in the peripheral portion of said at least one of the electrically conductive layers. Application to electrical capacitances and redistribution layers for microelectronic devices.