Patents by Inventor Gwi-Deok Lee
Gwi-Deok Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11101327Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.Type: GrantFiled: March 25, 2020Date of Patent: August 24, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Mo Im, Gwi-Deok Lee, Tae-Yon Lee, Masaru Ishii
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Publication number: 20200227482Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.Type: ApplicationFiled: March 25, 2020Publication date: July 16, 2020Inventors: Dong-Mo IM, Gwi-Deok LEE, Tae-Yon LEE, Masaru ISHII
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Patent number: 10615228Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.Type: GrantFiled: August 21, 2018Date of Patent: April 7, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Mo Im, Gwi-Deok Lee, Tae-Yon Lee, Masaru Ishii
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Patent number: 10529755Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.Type: GrantFiled: September 14, 2017Date of Patent: January 7, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Yon Lee, Gwi Deok Lee, Masaru Ishii, Young Gu Jin
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Publication number: 20190131349Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.Type: ApplicationFiled: August 21, 2018Publication date: May 2, 2019Inventors: Dong-Mo IM, Gwi-Deok LEE, Tae-Yon LEE, Masaru ISHII
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Publication number: 20180190699Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.Type: ApplicationFiled: September 14, 2017Publication date: July 5, 2018Inventors: TAE YON LEE, GWI DEOK LEE, MASARU ISHll, YOUNG GU JIN
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Patent number: 9385166Abstract: An image sensor includes a semiconductor layer, an organic photoelectric conversion portion disposed on an upper surface of the semiconductor layer and that converts a color component of incident light into a corresponding electrical signal, a transistor layer disposed on a lower surface of the semiconductor layer and including a pixel circuit that receives the electrical signal, and penetration wiring that laterally penetrates a side surface of the semiconductor layer between the upper and lower surfaces and that electrically connects the organic photoelectric conversion portion with the pixel circuit to communicate the electrical signal.Type: GrantFiled: January 14, 2015Date of Patent: July 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Kyu Jung, Sang-Chul Sul, Gwi-Deok Lee, Tae-Yon Lee, Myung-Won Lee
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Patent number: 9300887Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.Type: GrantFiled: April 18, 2014Date of Patent: March 29, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Gwi-Deok Lee, Kyung-Ho Lee, Hiroshige Goto, Sae-Young Kim, Sang-Chul Sul, Myung-Won Lee
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Publication number: 20150221702Abstract: Provided are an image sensor and an image processing device. The image sensor includes a semiconductor layer, an organic photoelectric conversion portion disposed on an upper surface of the semiconductor layer and converts a color component of incident light into a corresponding electrical signal, a transistor layer disposed on a lower surface of the semiconductor layer and including a pixel circuit that receives the electrical signal, and penetration wiring that laterally penetrates a side surface of the semiconductor layer between the upper and lower surfaces and that electrically connects the organic photoelectric conversion portion with the pixel circuit to communicate the electrical signal.Type: ApplicationFiled: January 14, 2015Publication date: August 6, 2015Inventors: JUNG-KYU JUNG, SANG-CHUL SUL, GWI-DEOK LEE, TAE-YON LEE, MYUNG-WON LEE
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Publication number: 20140313383Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.Type: ApplicationFiled: April 18, 2014Publication date: October 23, 2014Applicant: Samsung Electronics Co, Ltd.Inventors: Gwi-Deok Lee, Kyung-Ho Lee, Hiroshige Goto, Sae-Young Kim, Sang-Chul Sul, Myung-Won Lee