Abstract: A phase-locked loop (PLL) to provide clock generation for high-speed memory interface is presented as the innovate PLL (IPLL). The IPLL architecture is able to tolerate external long loop delay without deteriorating jitter performance. The IPLL comprises in part a common mode feedback circuit with a current mode approach, so as to minimize the effects of mismatch in charge-pump circuit, for instance. The voltage-controlled oscillator (VCO) of the IPLL is designed using a mutually interpolating technique generating a 50% duty clock output, beneficial to high-speed double data rate applications. The IPLL further comprises loop filter voltages that are directly connected to each VCO cell of the IPLL. Conventional voltage-to-current (V-I) converter between loop filter and VCO is hence not required. A tight distribution of VCO gain curves is therefore obtained for the present invention across process corners and varied temperatures.

Abstract: The present invention includes a technique for making a dual voltage integrated circuit device. A gate dielectric layer is formed on a semiconductor substrate and a gate material layer is formed on the dielectric layer. A first region of the gate material layer is doped to a first nonzero level and a second region of the gate material level is doped to a second nonzero level greater than the first level. A first field effect transistor is defined that has a first gate formed from the first region. Also, a second field effect transistor is defined that has a second gate formed from the second region. The first transistor is operable at a gate threshold voltage greater than the second transistor in accordance with a difference between the first level and the second level.

Abstract: A phase-locked loop (PLL) to provide clock generation for high-speed memory interface is presented as the innovate PLL (IPLL). The IPLL architecture is able to tolerate external long loop delay without deteriorating jitter performance. The IPLL comprises in part a common mode feedback circuit with a current mode approach, so as to minimize the effects of mismatch in charge-pump circuit, for instance. The voltage-controlled oscillator (VCO) of the IPLL is designed using a mutually interpolating technique generating a 50% duty clock output, beneficial to high-speed double data rate applications. The IPLL further comprises loop filter voltages that are directly connected to each VCO cell of the IPLL. Conventional voltage-to-current (V-I) converter between loop filter and VCO is hence not required. A tight distribution of VCO gain curves is therefore obtained for the present invention across process corners and varied temperatures.

Abstract: A delay-locked loop (DLL) circuit with mutual-interpolating architecture that provides multiple-phase clock generation is presented. Each delay-cell in the DLL circuit delay chain is effectively an interpolator that combines two input clock signals: one input clock signal is received from the output clock of previous stage in the delay chain, and the other input clock signal is fed back from a following stage. Each delay cell supports the concurrent functions of delay and interpolation. The architecture imposes a set of N simultaneous equations, where N is the total number of delay clock signals, to control the clock waveforms. These simultaneous equations obtain a unique solution when the DLL enters a lock state, and the generated delay clock signals inherently have a clock duty cycle of 50%. The delay chain can be implemented using either odd or even number of delay cells.

Abstract: A delay-locked loop (DLL) employs an in-loop duty cycle corrector (DCC) to provide accurate multiphase clock generation with 50% duty cycle. Each delay cell can advantageously provide both delay and duty cycle correction functionality. In one embodiment, delay correction can precede duty cycle correction. The bandwidths of the DCC and the DLL can differ by a factor of a decade to achieve fast and stable operation.

Abstract: A delay-locked loop (DLL) circuit with mutual-interpolating architecture that provides multiple-phase clock generation is presented. Each delay-cell in the DLL circuit delay chain is effectively an interpolator that combines two input clock signals: one input clock signal is received from the output clock of previous stage in the delay chain, and the other input clock signal is fed back from a following stage. Each delay cell supports the concurrent functions of delay and interpolation. The architecture imposes a set of N simultaneous equations, where N is the total number of delay clock signals, to control the clock waveforms. These simultaneous equations obtain a unique solution when the DLL enters a lock state, and the generated delay clock signals inherently have a clock duty cycle of 50%. The delay chain can be implemented using either odd or even number of delay cells.

Abstract: A delay-locked loop (DLL) employs an in-loop duty cycle corrector (DCC) to provide accurate multiphase clock generation with 50% duty cycle. Each delay cell can advantageously provide both delay and duty cycle correction functionality. In one embodiment, delay correction can precede duty cycle correction. The bandwidths of the DCC and the DLL can differ by a factor of a decade to achieve fast and stable operation.

Abstract: The present invention includes a technique for making a dual voltage integrated circuit device. A gate dielectric layer is formed on a semiconductor substrate and a gate material layer is formed on the dielectric layer. A first region of the gate material layer is doped to a first nonzero level and a second region of the gate material level is doped to a second nonzero level greater than the first level. A first field effect transistor is defined that has a first gate formed from the first region. Also, a second field effect transistor is defined that has a second gate formed from the second region. The first transistor is operable at a gate threshold voltage greater than the second transistor in accordance with a difference between the first level and the second level.

Abstract: The present invention includes a technique for making a dual voltage integrated circuit device. A gate dielectric layer is formed on a semiconductor substrate and a gate material layer is formed on the dielectric layer. A first region of the gate material layer is doped to a first nonzero level and a second region of the gate material level is doped to a second nonzero level greater than the first level. A first field effect transistor is defined that has a first gate formed from the first region. Also, a second field effect transistor is defined that has a second gate formed from the second region. The first transistor is operable at a gate threshold voltage greater than the second transistor in accordance with a difference between the first level and the second level.

Abstract: The present invention includes a technique for making a dual voltage integrated circuit device. A gate dielectric layer is formed on a semiconductor substrate and a gate material layer is formed on the dielectric layer. A first region of the gate material layer is doped to a first nonzero level and a second region of the gate material level is doped to a second nonzero level greater than the first level. A first field effect transistor is defined that has a first gate formed from the first region. Also, a second field effect transistor is defined that has a second gate formed from the second region. The first transistor is operable at a gate threshold voltage greater than the second transistor in accordance with a difference between the first level and the second level.

Abstract: A 100Base-TX receiver employs a finite impulse response (FIR) filter to provide both equalization and insertion loss compensation for an MLT-3 input signal. The FIR filter includes three delay stages, each delaying the input signal with an 8 ns delay (the period of one data cycle of the MLT-3 input signal), a set of three amplifiers for amplifying the delay stage outputs with gains C1, C2 and C3, and a summer for summing the outputs of the three amplifiers to produce a compensated, equalized MLT-3 signal. A low-pass filter filters the FIR filter output signal, and a data slicer digitizes the low-pass filter output during each data cycle to produce data representing the incoming MLT-3 as having one of six levels. An adaptive control signal processes the slicer output data to determine how to set the gains C1, C2 and C3 of the three FIR amplifiers to provide the correct amount of equalization and compensation.

Abstract: The present invention includes a technique for making a dual voltage integrated circuit device. A gate dielectric layer is formed on a semiconductor substrate and a gate material layer is formed on the dielectric layer. A first region of the gate material layer is doped to a first nonzero level and a second region of the gate material level is doped to a second nonzero level greater than the first level. A first field effect transistor is defined that has a first gate formed from the first region. Also, a second field effect transistor is defined that has a second gate formed from the second region. The first transistor is operable at a gate threshold voltage greater than the second transistor in accordance with a difference between the first level and the second level.