Abstract: A method for manufacturing a quantum-dot element utilizes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on a substrate. A substrate-supporting base is located inside the reaction chamber for fixing the substrate. An atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The method for manufacturing a quantum-dot element forms a quantum dot layer with uniformly distributed quantum dots and integrates the processes for forming the quantum-dot layer, the buffer layer, and the electrode layer together in the same chamber.

Abstract: An apparatus for manufacturing a quantum-dot element is disclosed. The apparatus includes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on the substrate. The substrate-supporting base is located inside the reaction chamber for fixing the substrate. The atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The apparatus of the present invention can form a quantum dot layer with uniformly distributed quantum dots and integrate the processes for forming a quantum-dot layer, a buffer layer, and an electrode layer together at the same chamber. Therefore, the quality of produced element can be substantially improved.

Abstract: A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.

Abstract: A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.

Abstract: A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.

Abstract: A light emitting diode. The light emitting diode comprises a lead frame and an LED chip therein. Packaging material in the lead frame is covers the LED chip. A plurality of ZnX quantum dots dispersed in the packaging material, wherein X is S, Se, Te or a combination thereof. A plurality of organic molecules covers each ZnX quantum dot.

Abstract: A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.

Abstract: A nanocrystal with high light absorption efficiency and a broad absorption spectrum, and a photovoltaic device comprising the nanocrystal are disclosed. The nanocrystal of the present invention comprises a core, a first shell grown and formed on the surface of the core, and a second shell grown and formed on the surface of the core or the surface of the first shell. Besides, the core, the first shell, and the second shell are a low energy gap material, a middle energy gap material, and a high energy gap material, respectively. Therefore, the nanocrystal has a great absorption in the ultraviolet range, the visible light range, and the infrared range; and the solar spectrum can be converted effectively to improve the light conversion efficiency thereof.

Abstract: A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.

Abstract: The present invention relates to a nanocomposite material, which comprises bedded clay modified by alkyl amino salt with long chain and a silicone compound with functional group, then mix with a polymer compound. The present invention has a high rigidity and tenacity by inserting the polymer compound into the layers of the modified clay.

Abstract: A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II–VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.

Abstract: An apparatus for manufacturing a quantum-dot element is disclosed. The apparatus includes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on the substrate. The substrate-supporting base is located inside the reaction chamber for fixing the substrate. The atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The apparatus of the present invention can form a quantum dot layer with uniformly distributed quantum dots and integrate the processes for forming a quantum-dot layer, a buffer layer, and an electrode layer together at the same chamber. Therefore, the quality of produced element can be substantially improved.

Abstract: A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.

Abstract: A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II-VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.

Abstract: A light emitting diode. The light emitting diode comprises a lead frame and an LED chip therein. Packaging material in the lead frame is covers the LED chip. A plurality of ZnX quantum dots dispersed in the packaging material, wherein X is S, Se, Te or a combination thereof. A plurality of organic molecules covers each ZnX quantum dot.

Abstract: A polyolefin-based nanocomposite and a method of preparing the same are disclosed. The polyolefin-based nanocomposite is prepared by melt kneading a mixture including (A) 40-99.8% by weight of a matrix polymer of polyolefin; (B) 0.1-30% by weight of a polyolefin compatilizer containing polar reactive groups; and (C) 0.1-30% by weight of a layered clay material having a quaternary ammonium ion bonded to the surface thereof. The quaternary ammonium ion contains (I) at least one alkyl group having at least 15 carbon atoms; and (ii) a substitutent having —Si—O—Si—linkage and at least one terminal reactive group.

Abstract: A polyolefin-based nanocomposite and a method of preparing the same are disclosed. The polyolefin-based nanocomposite is prepared by melt kneading a mixture including (A) 40-99.8% by weight of a matrix polymer of polyolefin; (B) 0.1-30% by weight of a polyolefin compatilizer containing polar reactive groups; and (C) 0.1-30% by weight of a layered clay material having a quaternary ammonium ion bonded to the surface thereof. The quaternary ammonium ion contains (I) at least one alkyl group having at least 15 carbon atoms; and (ii) a substitutent having —Si—O—Si-linkage and at least one terminal reactive group.

Abstract: A method for the polymerization of Nylon 6 from caprolactam and water using a catalyst composition comprising a primary catalyst, which can be an alkali metal hypophosphite or an alkali-earth metal hypophosphite, and an organic phosphite as cocatalyst. The catalyst composition used in this invention is most useful when used in conjunction with the reactive extrusion technology which requires a very fast polymerization rate to take full advantage of this evolving technology.