Patents by Inventor Gwo-Yuh Shiau
Gwo-Yuh Shiau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9356108Abstract: Dummy structures between a high voltage (HV) region and a low voltage (LV) region of a substrate are disclosed, along with methods of forming the dummy structures. An embodiment is a structure comprising a HV gate dielectric over a HV region of a substrate, a LV gate dielectric over a LV region of the substrate, and a dummy structure over a top surface of the HV gate dielectric. A thickness of the LV gate dielectric is less than a thickness of the HV gate dielectric. The dummy structure is on a sidewall of the HV gate dielectric.Type: GrantFiled: July 31, 2014Date of Patent: May 31, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Huei-Ru Liou, Chien-Chih Chou, Kong-Beng Thei, Gwo-Yuh Shiau
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Publication number: 20140342541Abstract: Dummy structures between a high voltage (HV) region and a low voltage (LV) region of a substrate are disclosed, along with methods of forming the dummy structures. An embodiment is a structure comprising a HV gate dielectric over a HV region of a substrate, a LV gate dielectric over a LV region of the substrate, and a dummy structure over a top surface of the HV gate dielectric. A thickness of the LV gate dielectric is less than a thickness of the HV gate dielectric. The dummy structure is on a sidewall of the HV gate dielectric.Type: ApplicationFiled: July 31, 2014Publication date: November 20, 2014Inventors: Huei-Ru Liou, Chien-Chih Chou, Kong-Beng Thei, Gwo-Yuh Shiau
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Patent number: 8847319Abstract: Dummy structures between a high voltage (HV) region and a low voltage (LV) region of a substrate are disclosed, along with methods of forming the dummy structures. An embodiment is a structure comprising a HV gate dielectric over a HV region of a substrate, a LV gate dielectric over a LV region of the substrate, and a dummy structure over a top surface of the HV gate dielectric. A thickness of the LV gate dielectric is less than a thickness of the HV gate dielectric. The dummy structure is on a sidewall of the HV gate dielectric.Type: GrantFiled: March 9, 2012Date of Patent: September 30, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Huei-Ru Liu, Chien-Chih Chou, Kong-Beng Thei, Gwo-Yuh Shiau
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Patent number: 8710560Abstract: A semiconductor device includes a semiconductor substrate having a front surface and a back surface, elements formed on the substrate, interconnect metal layers formed over the front surface of the substrate, including a topmost interconnect metal layer, an inter-metal dielectric for insulating each of the plurality of interconnect metal layers, and a bonding pad disposed within the inter-metal dielectric, the bonding pad in contact with one of the interconnect metal layers other than the topmost interconnect metal layer.Type: GrantFiled: August 8, 2007Date of Patent: April 29, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yuan-Chih Hsieh, Shih-Chang Liu, Shih-Chi Fu, Tzu-Hsuan Hsu, Chung-Yi Yu, Gwo-Yuh Shiau, Chia-Shiung Tsai
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Publication number: 20130234244Abstract: Dummy structures between a high voltage (HV) region and a low voltage (LV) region of a substrate are disclosed, along with methods of forming the dummy structures. An embodiment is a structure comprising a HV gate dielectric over a HV region of a substrate, a LV gate dielectric over a LV region of the substrate, and a dummy structure over a top surface of the HV gate dielectric. A thickness of the LV gate dielectric is less than a thickness of the HV gate dielectric. The dummy structure is on a sidewall of the HV gate dielectric.Type: ApplicationFiled: March 9, 2012Publication date: September 12, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Huei-Ru Liu, Chien-Chih Chou, Kong-Beng Thei, Gwo-Yuh Shiau
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Patent number: 8357561Abstract: A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate having a front surface and a back surface; forming an alignment mark at the front surface of the substrate, wherein the alignment mark is detectable for alignment from the back surface; and processing the substrate from the back surface by performing registration from the back surface and using the alignment mark as a reference.Type: GrantFiled: March 9, 2011Date of Patent: January 22, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Chi Fu, Gwo-Yuh Shiau, Liang-Lung Yao, Yuan-Chih Hsieh, Feng-Jia Shiu
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Patent number: 8053853Abstract: An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.Type: GrantFiled: May 3, 2006Date of Patent: November 8, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jiunn-Yih Chyan, Gwo-Yuh Shiau, Chia-Shiung Tsai
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Patent number: 8048807Abstract: Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH.Type: GrantFiled: September 5, 2008Date of Patent: November 1, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming Chyi Liu, Yao Fei Chuang, Martin Liu, Gwo-Yuh Shiau, Chia-Shiung Tsai
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Publication number: 20110159631Abstract: A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate having a front surface and a back surface; forming an alignment mark at the front surface of the substrate, wherein the alignment mark is detectable for alignment from the back surface; and processing the substrate from the back surface by performing registration from the back surface and using the alignment mark as a reference.Type: ApplicationFiled: March 9, 2011Publication date: June 30, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Chu Fu, Gwo-Yuh Shiau, Liang-Lung Yao, Yuan-Chih Hsieh, Feng-Jia Shiu
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Patent number: 7923344Abstract: A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark.Type: GrantFiled: December 9, 2009Date of Patent: April 12, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Chi Fu, Gwo-Yuh Shiau, Liang-Lung Yao, Yuan-Chih Hsieh, Feng-Jia Shiu
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Patent number: 7883917Abstract: A method for forming a semiconductor device with a bonding pad is disclosed. A first substrate having a device area and a bonding area is provided, wherein the first substrate has an upper surface and a bottom surface. Semiconductor elements are formed on the upper surface of the first substrate in the device area. A first inter-metal dielectric layer is formed on the upper surface of the substrate in the bonding area. A lowermost metal pattern is formed in the first inter-metal dielectric layer, wherein the lowermost metal pattern serves as the bonding pad. An opening through the first substrate is formed to expose the lowermost metal pattern.Type: GrantFiled: January 15, 2009Date of Patent: February 8, 2011Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Chyi Liu, Yuan-Hung Liu, Gwo-Yuh Shiau, Yuan-Chih Hsieh, Chi-Hsin Lo, Chia-Shiung Tsai
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Patent number: 7883926Abstract: Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.Type: GrantFiled: February 23, 2010Date of Patent: February 8, 2011Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Gwo-Yuh Shiau, Ming-Chyi Liu, Yuan-Chih Hsieh, Shih-Chi Fu, Chia-Shiung Tsai
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Patent number: 7863067Abstract: The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one imaging sensor is located adjacent the first surface, activating a dopant layer in the semiconductor substrate adjacent the second surface using a localized annealing process, and etching the dopant layer.Type: GrantFiled: March 14, 2007Date of Patent: January 4, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Gwo-Yuh Shiau, Ming Chyi Liu, Tzu-Hsuan Hsu, Chia-Shiung Tsai
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Publication number: 20100151615Abstract: Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.Type: ApplicationFiled: February 23, 2010Publication date: June 17, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Gwo-Yuh Shiau, Ming-Chyi Liu, Yuan-Chih Hsieh, Shih-Chi Fu, Chia-Shiung Tsai
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Patent number: 7732299Abstract: The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a top metal layer on a first substrate, in which the top metal layer has a plurality of interconnect features and a first dummy feature; forming a first dielectric layer over the top metal layer; etching the first dielectric layer in a target region substantially vertically aligned to the plurality of interconnect features and the first dummy feature of the top metal layer; performing a chemical mechanical polishing (CMP) process over the first dielectric layer; and thereafter bonding the first substrate to a second substrate.Type: GrantFiled: February 12, 2007Date of Patent: June 8, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fa-Yuan Chang, Tsung-Mu Lai, Kai-Chih Liang, Hua-Shu Wu, Chin-Hsiang Ho, Gwo-Yuh Shiau, Chu-Wei Cheng, Ming-Chyi Liu, Yuan-Chih Hsieh, Chia-Shiung Tsai, Nick Y. M. Shen, Ching-Chung Pai
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Patent number: 7709872Abstract: Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.Type: GrantFiled: September 13, 2006Date of Patent: May 4, 2010Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Gwo-Yuh Shiau, Ming-Chyi Liu, Yuan-Chih Hsieh, Shih-Chi Fu, Chia-Shiung Tsai
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Publication number: 20100087029Abstract: A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark.Type: ApplicationFiled: December 9, 2009Publication date: April 8, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Chi Fu, Gwo-Yuh Shiau, Liang-Lung Yao, Yuan-Chih Hsieh, Feng-Jia Shiu
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Publication number: 20100062611Abstract: Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH.Type: ApplicationFiled: September 5, 2008Publication date: March 11, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ming Chyi Liu, Yao Fei Chuang, Martin Liu, Gwo-Yuh Shiau, Chia-Shiung Tsai
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Patent number: RE41697Abstract: A method of forming a planarized photoresist coating on a substrate having holes with different duty ratios is described. A first photoresist preferably comprised of a Novolac resin and a diazonaphthoquinone photoactive compound is coated on a substrate and baked at or slightly above its Tg so that it reflows and fills the holes. The photoresist is exposed without a mask at a dose that allows the developer to thin the photoresist to a recessed depth within the holes. After the photoresist is hardened with a 250° C. bake, a second photoresist is coated on the substrate to form a planarized film with a thickness variation of less than 50 Angstroms between low and high duty ratio hole regions. One application is where the second photoresist is used to form a trench pattern in a via first dual damascene method. Secondly, the method is useful in fabricating MIM capacitors.Type: GrantFiled: September 26, 2005Date of Patent: September 14, 2010Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Chia-Tung Ho, Feng-Jia Shih, Jieh-Jang Chen, Ching-Sen Kuo, Shih-Chi Fu, Gwo-Yuh Shiau, Chia-Shiung Tsai
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Patent number: RE44376Abstract: The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one imaging sensor is located adjacent the first surface, activating a dopant layer in the semiconductor substrate adjacent the second surface using a localized annealing process, and etching the dopant layer.Type: GrantFiled: May 27, 2011Date of Patent: July 16, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Gwo-Yuh Shiau, Ming Chyi Liu, Tzu-Hsuan Hsu, Chia-Shiung Tsai