Abstract: The present invention provides a selective area atomic layer deposition apparatus that deposits an atomic layer thin film on a substrate by supplying a source gas and a purge gas, the apparatus comprising: a reaction chamber; a stage disposed within the reaction chamber, a substrate being disposed on one surface of the stage; a combination nozzle unit disposed above the stage to move relative to the stage; and a gas supply unit that supplies a precursor and an oxidant for forming an atomic layer thin film on the substrate, wherein the combination nozzle unit has a laser core that applies a laser beam to selectively locally heat one surface of the substrate, and the gas supply unit is disposed such that at least a part thereof is adjacent to the laser core, and supplies the precursor and the oxidant to the area on the surface of the substrate that is selectively locally heated by the laser core, wherein the precursor is adsorbed onto the heated area of the substrate, and the oxidant removes ligands of the prec