Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

Abstract: A method for fabricating a semiconductor device, including forming a lower structure on a substrate. The lower structure includes a first sacrificial layer and a first insulating layer alternately and repeatedly stacked. A first hole is formed in the lower substrate. The first hole exposes an upper surface of the substrate. A sacrificial pattern is formed in the first hole. A porosity of the sacrificial pattern increases toward the substrate. An upper structure is formed on the lower structure and the sacrificial pattern. The upper structure includes a second sacrificial layer and a second insulating layer alternatively and repeatedly stacked. A second hole is formed in the upper structure. The second hole exposes the sacrificial pattern. The sacrificial pattern is removed.

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

Abstract: A method for fabricating a semiconductor device, including forming a lower structure on a substrate. The lower structure includes a first sacrificial layer and a first insulating layer alternately and repeatedly stacked. A first hole is formed in the lower substrate. The first hole exposes an upper surface of the substrate. A sacrificial pattern is formed in the first hole. A porosity of the sacrificial pattern increases toward the substrate. An upper structure is formed on the lower structure and the sacrificial pattern. The upper structure includes a second sacrificial layer and a second insulating layer alternatively and repeatedly stacked. A second hole is formed in the upper structure. The second hole exposes the sacrificial pattern. The sacrificial pattern is removed.