Abstract: A display device including a substrate including a display area and a non-display area, pixels provided in the display area, an encapsulation layer on the pixels, a first conductive pattern on the encapsulation layer and including a first metal layer of sensing lines disposed in a non-sensing area corresponding to the non-display area, a first insulating layer on the first conductive pattern, a second conductive pattern on the first insulating layer and including a second metal layer of the sensing lines, and a second insulating layer on the second conductive pattern, in which the first metal layer includes a first end located in the non-sensing area corresponding to a first side of a sensing area and a second end located in the non-sensing area corresponding to a second side adjacent to the first side, and the first end and the second end are spaced apart from each other.

Abstract: The present disclosure relates to a simulation apparatus for secondary battery production.

Abstract: Disclosed are an environment-friendly heat shielding film using a non-radioactive stable isotope and a manufacturing method therefor and, more specifically, an environment-friendly heat shielding film using a non-radioactive stable isotope and a manufacturing method therefor, wherein a heat shielding layer is formed on one surface of a substrate layer; the heat shielding layer is composed of stable isotopes as elements constituting a precursor and contains a non-radioactive stable isotope tungsten bronze compound having an oxygen-deficient (Y)Ax(182,183,184,186)W1O(3-n) type hexagonal structure, thereby preventing the generation of radioactive materials, fundamentally blocking haze, and improving the visible light transmittance and the infrared light blocking rate; and the heat resistance and durability problems that may occur when the heat shielding layer is formed of the non-radioactive stable isotope tungsten bronze compound are solved by a passivation film.

Abstract: A method for manufacturing an environmental-friendly heat shielding film using a non-radioactive stable isotope includes: a substrate layer providing step of providing a substrate layer; and a heat shielding layer forming step of, after the substrate layer providing step, forming, on one surface of the substrate layer, a heat shielding layer containing a non-radioactive stable isotope tungsten bronze compound that does not emit radiation.

Abstract: Disclosed are an environment-friendly heat shielding film using a non-radioactive stable isotope and a manufacturing method therefor and, more specifically, an environment-friendly heat shielding film using a non-radioactive stable isotope and a manufacturing method therefor, wherein a heat shielding layer is formed on one surface of a substrate layer; the heat shielding layer is composed of stable isotopes as elements constituting a precursor and contains a non-radioactive stable isotope tungsten bronze compound having an oxygen-deficient (Y)Ax(182,183,184,186)W1O(3-n) type hexagonal structure, thereby preventing the generation of radioactive materials, fundamentally blocking haze, and improving the visible light transmittance and the infrared light blocking rate; and the heat resistance and durability problems that may occur when the heat shielding layer is formed of the non-radioactive stable isotope tungsten bronze compound are solved by a passivation film.

Abstract: A stack package having a plurality of stacked chips includes first voltage dropping units respectively formed in the plurality of chips, the first voltage dropping units are electrically coupled by a first line; second voltage dropping units respectively formed in the plurality of chips, the second dropping units are electrically coupled by a second line; first signal generation units respectively formed in the plurality of chips, each of the first signal generation units is connected to an output node of the first voltage dropping units, respectively; and second signal generation units respectively formed in the plurality of chips, each of the second signal generation units is connected to an input node of the second voltage dropping units, respectively.

Abstract: A stack package having stacked chips includes first voltage dropping units respectively formed in the chips; second voltage dropping units respectively formed in the chips; first signal generation units connected in parallel to a first line formed by connecting the first voltage dropping units in series, respectively formed in the chips, and configured to apply high level signals according to a voltage of the first line; second signal generation units connected in parallel to a second line formed by connecting in series the second voltage dropping units, respectively formed in the chips, and configured to apply high level signals according to a voltage of the second line; and chip selection signal generation units respectively formed in the chips, and configured to combine signals outputted from the first signal generation units and the second signal generation units and generate chip selection signals.

Abstract: A method for predicting the formation of silicon nanocrystals in an oxide matrix is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. Kinetic models are then built by utilizing the fundamental data for a set of reactions that can contribute substantially to the formation of silicon nanocrystals in a silicon oxide matrix. Finally, the kinetic models are applied to predict shape, size distribution, spatial arrangements of silicon nanocrystals.

Abstract: A method for predicting the contribution of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. The fundamental data are then utilized to build kinetic models for a set of reactions that contribute substantially to an evolution of n-type dopant concentration and electrical activities. The kinetic models are subsequently applied to a simulator to predict temporal and spatial evolutions of concentration and electrical activity profiles of the n-type dopants.

Abstract: Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted.