Abstract: The present invention relates to a single transistor implementing a neuromorphic system capable of performing neuron and synaptic operations through the single transistor including a floating body layer and a charge storage layer and being implemented by a neuron device and a synaptic device which are co-integrated on the same plane, and the neuromorphic system using the same, and forms the single transistor including a hole barrier material layer formed on a substrate and including a hole barrier material or an electron barrier material, the floating body layer formed on the hole barrier material layer, a source and a drain formed on opposite sides of the floating body layer, a gate insulating layer formed on the floating body layer and including an oxide layer and the charge storage layer, and a gate formed on the gate insulating layer.