Abstract: A substrate processing system comprising: a plasma processing apparatus; a depressurization transfer device having a transfer robot and an edge ring; and a controller is disclosed. The plasma processing apparatus includes: a depressurizable processing chamber; a substrate support table; a lifting mechanism; a gas supply part; and a plasma generating part. The controller controls following steps to be performed in following order: (a) performing plasma processing on the substrate and, then, applying a voltage of a first polarity to the electrode; (b) neutralizing the edge ring, by applying a voltage of a second polarity to the electrode while supplying a gas, and stopping the application of the voltage to the electrode after a predetermined period of time elapses; (c) separating the edge ring from a ring placing surface of the substrate support table; and (d) transferring the edge ring from the processing chamber to the depressurization pressure transfer device.

Abstract: A plasma processing apparatus, comprising a plasma processing chamber; a plasma generator to generate a plasma from a processing gas in the plasma processing chamber; and a substrate support disposed in the plasma processing chamber, is provided. The substrate support includes a base; an electrostatic chuck disposed above the base; a first annular member to surround a substrate on the substrate support; a second annular member disposed below the first annular member and having a plurality of through holes; a plurality of lift pins disposed to correspond to the respective through holes, each lift pin having an upper portion to support the first annular member through the corresponding through hole and a lower portion; at least one spacer fixed to at least one of the lift pins, disposed on the lower portion so as to surround the upper portion and support the second annular member; and at least one actuator to vertically move the lift pins.

Abstract: The present invention relates to a method for culturing natural killer cells, using genetically modified T cells. A method for culturing natural killer cells, using genetically modified T cells according to the present invention enables the effective proliferation and production of natural killer cells from a smaller amount of source cells. In addition, the method enhances the cytolytic activity of natural killer cells. Therefore, the method for culturing natural killer cells, using genetically modified T cells according to the present invention can find useful applications in commercializing cell therapy products. Further, the natural killer cells produced by the culturing method of the present invention can be useful as a cell therapy product.

Abstract: A substrate processing system including a plasma processing apparatus including a processing container, a decompressed transferrer connected to the plasma processing apparatus, and a controller, a substrate support, a ring placing surface for receiving an edge ring, and an electrostatic chuck for electrostatically attracting the edge ring to the ring placing surface, a supply path for supplying a gas between a rear surface of the edge ring and the ring placing surface, and a pressure sensor connected to the supply path, the edge ring is placed on the ring placing surface, gas is supplied to the supply path to maintain a pressure in the supply path to be higher than a pressure in the processing container, the pressure in the supply path is measured by the pressure sensor to determine a placing state of the edge ring on the ring placing surface.

Abstract: A substrate processing system includes a plasma processing apparatus, a decompression transferrer coupled to the plasma processing apparatus, and control circuitry that controls a transfer robot to load an edge ring into a process chamber and to transfer the edge ring to a lift assembly, controls the lift assembly to lower the edge ring onto a ring support surface, controls an electrostatic chuck to electrostatically clamp the edge ring onto the ring support surface, and controls a plasma generator to generate plasma in the process chamber and stabilize the electrostatically clamping of the edge ring onto the electrostatic chuck before performing plasma processing on a product substrate, the stabilizing includes controlling a power source to apply pulsed direct current voltage to the substrate support, including applying a first bias voltage and applying a second bias voltage higher than the first bias voltage after applying the first bias voltage.

Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

Abstract: A substrate processing system includes a vacuum transfer module, a substrate processing module connected to the vacuum transfer module and including: a substrate processing chamber; a stage disposed in the substrate processing chamber; a first ring and a second ring disposed so as to surround a substrate placed on the stage; and a lifter configured to vertically move the first ring and the second ring with respect to the stage; a storage module connected to the vacuum transfer module and including a vertically movable ring storage; and a controller configured to selectively execute a simultaneous transfer mode in which the first ring and the second ring are simultaneously transferred between the substrate processing module and the storage module, and a sole transfer mode in which the second ring is solely transferred between the substrate processing module and the storage module.

Abstract: A method for culturing natural killer cells uses genetically modified T cells. The method for culturing natural killer cells, using genetically modified T cells enables the effective proliferation and production of natural killer cells from a smaller amount of source cells. In addition, the method enhances the cytolytic activity of natural killer cells. Therefore, the method for culturing natural killer cells, using genetically modified T cells may be suitable for various applications in commercializing cell therapy products. Further, the natural killer cells produced by the culturing method can be useful as a cell therapy product.

Abstract: According to the present technology, a storage device may include a plurality of first memory devices, a second memory device, and a memory controller. Each of the plurality of first memory devices may include a plurality of zones in which sequential writing is performed. The second memory device may include a plurality of parity zones. The memory controller may allocate to a parity group, first zones included in the respective first memory devices and a first parity zone storing parity data for data stored in the first zones, release from the parity group, the first zone invalidated among the first zones by writing new data into a target zone different from the invalidated first zone among the zones included in the first memory device including the invalidated first zone, and allocate the target zone to the parity group.

Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

Abstract: A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.

Abstract: According to the present technology, a storage device may include a plurality of first memory devices, a second memory device, and a memory controller. Each of the plurality of first memory devices may include a plurality of zones in which sequential writing is performed. The second memory device may include a plurality of parity zones. The memory controller may allocate to a parity group, first zones included in the respective first memory devices and a first parity zone storing parity data for data stored in the first zones, release from the parity group, the first zone invalidated among the first zones by writing new data into a target zone different from the invalidated first zone among the zones included in the first memory device including the invalidated first zone, and allocate the target zone to the parity group.

Abstract: A substrate processing apparatus comprises a substrate support disposed in the chamber, a shutter including a valve body configured to open and close an opening of the chamber, and a baffle plate disposed between an inner peripheral side of the chamber and the substrate support and having a vertically inclined portion at an end portion on a substrate support side, and a contact member disposed on a side surface of the substrate support and formed of a conductive elastic member. In a state where the shutter is closed, contact between the end portion on the substrate support side and the contact member is maintained.

Abstract: The present invention pertains to a method for culturing cord blood-derived natural killer cells using transformed T-cells. The method for culturing natural killer cells using transformed T-cells according to the present invention can effectively propagate and produce natural killer cells from a small amount of raw cells. In addition, the method can also improve the cell-killing ability of natural killer cells. Thus, the method for culturing natural killer cells using transformed T-cells according to the present invention can be usefully used to commercialize cell therapeutic agents. Moreover, natural killer cells produced by the culturing method of the present invention can be usefully used as a cell therapeutic agent.

Abstract: According to the present technology, a storage device may include a plurality of first memory devices, a second memory device, and a memory controller. Each of the plurality of first memory devices may include a plurality of zones in which sequential writing is performed. The second memory device may include a plurality of parity zones. The memory controller may allocate to a parity group, first zones included in the respective first memory devices and a first parity zone storing parity data for data stored in the first zones, release from the parity group, the first zone invalidated among the first zones by writing new data into a target zone different from the invalidated first zone among the zones included in the first memory device including the invalidated first zone, and allocate the target zone to the parity group.

Abstract: A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.

Abstract: There is a substrate support comprising: a substrate supporting portion; a first ring disposed to surround the substrate supporting portion; a second ring surrounding the first ring without overlapping the first ring in plan view; a third ring disposed below the first ring and the second ring such that an inner portion of the third ring overlaps the first ring in plan view and an outer portion of the third ring overlaps the second ring in plan view, and having a hole at the inner portion of the third ring; a lifter having a first engaging portion protruding upward from the hole of the third ring and engaged with the first ring and a second engaging portion disposed below the first engaging portion and engaged with the third ring; and an actuator configured to raise and lower the lifter.

Abstract: A plasma processing apparatus, comprising a plasma processing chamber; a plasma generator to generate a plasma from a processing gas in the plasma processing chamber; and a substrate support disposed in the plasma processing chamber, is provided. The substrate support includes a base; an electrostatic chuck disposed above the base; a first annular member to surround a substrate on the substrate support; a second annular member disposed below the first annular member and having a plurality of through holes; a plurality of lift pins disposed to correspond to the respective through holes, each lift pin having an upper portion to support the first annular member through the corresponding through hole and a lower portion; at least one spacer fixed to at least one of the lift pins, disposed on the lower portion so as to surround the upper portion and support the second annular member; and at least one actuator to vertically move the lift pins.

Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

Abstract: A method for culturing natural killer cells uses genetically modified T cells. The method for culturing natural killer cells, using genetically modified T cells enables the effective proliferation and production of natural killer cells from a smaller amount of source cells. In addition, the method enhances the cytolytic activity of natural killer cells. Therefore, the method for culturing natural killer cells, using genetically modified T cells may be suitable for various applications in commercializing cell therapy products. Further, the natural killer cells produced by the culturing method can be useful as a cell therapy product.