Abstract: Proposed is an apparatus for measuring capsaicin in chili peppers. More particularly, proposed are an apparatus and a method for measuring capsaicin in chili peppers, the apparatus and the method being capable of measuring the capsaicin content of chili peppers simply and precisely. The apparatus includes: a first electrochemical measuring cell and a second electrochemical measuring cell into each of which a capsaicin extract is injected; a multiplexer electrically connected to a selected one of the first and second electrochemical measuring cells; a potentiostat applying voltage to the first or second electrochemical measuring cell and measuring an oxidation current value; and a controller controlling the potentiostat and the multiplexer to sequentially electrically connect the potentiostat to each of the first and second electrochemical measuring cells and measuring a first capsaicin content and a second capsaicin content on the basis of the oxidation current value as a function of applied voltage.

Abstract: A blankmask for extreme ultraviolet lithography includes a reflection film, a capping film, and an absorbing film that are sequentially formed on a transparent substrate, in which the reflection film has a surface roughness of 0.5 nm Ra or less. It is possible to prevent footing of an EUV photomask pattern from occurring, improving flatness of an EUV blankmask, and prevent oxidation and defects of a capping film.

Abstract: A blankmask includes a conductive layer attached to a backside of a substrate, and the conductive layer includes a first layer, a second layer, and a third layer that are sequentially stacked on the backside of the substrate. The first layer and the third layer are made of a material that contains chromium (Cr) and oxygen (O), and the second layer is made of a material that does not contain the oxygen (O) but contains the chromium (Cr). There is provided the blankmask with the conductive layer having characteristics of low sheet resistance, high adhesion to the substrate, and low stress applied to the substrate.

Abstract: A blankmask for extreme ultraviolet lithography includes a reflection film, a capping film, and an absorbing film that are sequentially formed on a transparent substrate, in which the reflection film has a surface roughness of 0.5 nm Ra or less. It is possible to prevent footing of an EUV photomask pattern from occurring, improving flatness of an EUV blankmask, and prevent oxidation and defects of a capping film.