Abstract: An image sensor includes a substrate having pixel regions, and a deep isolation pattern provided between the pixel regions within the substrate, wherein the deep isolation pattern includes a liner film covering a sidewall of a trench in the substrate, a first pattern provided on an inner sidewall of the liner film and having a height less than a height of the liner film, an isolation film on inner sidewall of the first pattern, and a second pattern covering inner sidewalls of the isolation film and an upper portion of an inner sidewall of the liner film, a void is provided in the second pattern, the second pattern is spaced apart from the first pattern by the isolation film, and a grain size of the second pattern is larger than a grain size of the first pattern.