Abstract: A buffer unit for temporarily storing a substrate includes a housing having a space for storing a substrate therein, one or more slots disposed within the housing for placing a substrate thereon, and a holding unit disposed at a bottom portion of the housing, having a flat and non-inclined top surface, and comprising a built-in wireless charging module. A substrate type sensor is stored at the holding unit.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes performing an optical proximity correction (OPC) on design patterns of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate using a photomask manufactured based on the corrected layout. The OPC comprises generating develop targets for the design patterns, respectively, choosing first object patterns based on distances between the develop targets, performing a first OPC operation on the design patterns based on a mask rule to generate first correction patterns, choosing second object patterns by considering distances between the first correction patterns and a target error of each of the first correction patterns, and performing a second OPC operation on the first and second object patterns to generate second correction patterns, the performing the second OPC not based on the mask rule.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes performing an optical proximity correction (OPC) on design patterns of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate using a photomask manufactured based on the corrected layout. The OPC comprises generating develop targets for the design patterns, respectively, choosing first object patterns based on distances between the develop targets, performing a first OPC operation on the design patterns based on a mask rule to generate first correction patterns, choosing second object patterns by considering distances between the first correction patterns and a target error of each of the first correction patterns, and performing a second OPC operation on the first and second object patterns to generate second correction patterns, the performing the second OPC not based on the mask rule.

Abstract: A fine-patterning method includes forming a mask layer with lower and upper mask layers on an underlying layer, forming a pair of sacrificial patterns on the mask layer, forming a connection spacer between the sacrificial patterns and first spacers that are spaced apart from each other with the pair of sacrificial patterns interposed therebetween and covering side surfaces of the sacrificial patterns, etching the upper mask layer using the first spacers and the connection spacer as an etch mask to form upper mask patterns, forming second spacers to cover side surfaces of the upper mask patterns, etching the lower mask layer using the second spacers as an etch mask to form lower mask patterns, and etching the underlying layer using the lower mask patterns as an etch mask.

Abstract: A fine-patterning method includes forming a mask layer with lower and upper mask layers on an underlying layer, forming a pair of sacrificial patterns on the mask layer, forming a connection spacer between the sacrificial patterns and first spacers that are spaced apart from each other with the pair of sacrificial patterns interposed therebetween and covering side surfaces of the sacrificial patterns, etching the upper mask layer using the first spacers and the connection spacer as an etch mask to form upper mask patterns, forming second spacers to cover side surfaces of the upper mask patterns, etching the lower mask layer using the second spacers as an etch mask to form lower mask patterns, and etching the underlying layer using the lower mask patterns as an etch mask.

Abstract: A fine-patterning method includes forming a mask layer with lower and upper mask layers on an underlying layer, forming a pair of sacrificial patterns on the mask layer, forming a connection spacer between the sacrificial patterns and first spacers that are spaced apart from each other with the pair of sacrificial patterns interposed therebetween and covering side surfaces of the sacrificial patterns, etching the upper mask layer using the first spacers and the connection spacer as an etch mask to form upper mask patterns, forming second spacers to cover side surfaces of the upper mask patterns, etching the lower mask layer using the second spacers as an etch mask to form lower mask patterns, and etching the underlying layer using the lower mask patterns as an etch mask.

Abstract: A fine-patterning method includes forming a mask layer with lower and upper mask layers on an underlying layer, forming a pair of sacrificial patterns on the mask layer, forming a connection spacer between the sacrificial patterns and first spacers that are spaced apart from each other with the pair of sacrificial patterns interposed therebetween and covering side surfaces of the sacrificial patterns, etching the upper mask layer using the first spacers and the connection spacer as an etch mask to form upper mask patterns, forming second spacers to cover side surfaces of the upper mask patterns, etching the lower mask layer using the second spacers as an etch mask to form lower mask patterns, and etching the underlying layer using the lower mask patterns as an etch mask.