Patents by Inventor Gyeongyun HAN

Gyeongyun HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9953827
    Abstract: A method of fabricating a semiconductor device including an interlayer insulating layer and interconnections is provided. An interlayer insulating layer is formed on a substrate. An opening is formed in the interlayer insulating layer. A degassing process is performed by irradiating the interlayer insulating layer having the opening with microwaves. A K-value recovery process is performed by irradiating the interlayer insulating layer having the opening with UV light. A conductive layer is formed in the opening. The degassing process and the K-value recovery process are performed as an in-situ process.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: April 24, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woochoel Noh, Wonkyu Han, Hyeoksang Oh, Naein Lee, Gyeongyun Han
  • Publication number: 20170084481
    Abstract: A method of fabricating a semiconductor device including an interlayer insulating layer and interconnections is provided. An interlayer insulating layer is formed on a substrate. An opening is formed in the interlayer insulating layer. A degassing process is performed by irradiating the interlayer insulating layer having the opening with microwaves. A K-value recovery process is performed by irradiating the interlayer insulating layer having the opening with UV light. A conductive layer is formed in the opening. The degassing process and the K-value recovery process are performed as an in-situ process.
    Type: Application
    Filed: September 23, 2016
    Publication date: March 23, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Woochoel NOH, Wonkyu HAN, Hyeoksang OH, Naein LEE, Gyeongyun HAN