Abstract: A plasma apparatus for vapor phase etching and cleaning, includes a reactor body configured to process a substrate; a direct plasma generation area in the reactor body, into which a process gas is introduced and in which plasma is directly induced to disassociate the process gas; a substrate processing area in the reactor body in which the substrate is processed by reactive species produced by reacting the disassociated process gas introduced from the direct plasma generation area with a vaporised gas introduced from the outside of the reactor body; a plasma induction assembly configured to induce plasma in the direct plasma generation area; and a gas distribution baffle, disposed between the direct plasma generation area and the substrate processing area, having a plurality of through holes through which the disassociated process gas is introduced from the direct plasma generation area to the substrate processing area.

Abstract: A plasma processing chamber includes a chamber body having a substrate support on which the substrate to be processed is placed, a dielectric window forming a ceiling of the chamber body, an inductive antenna set on a upper part of the dielectric window and configured to supply an electromotive force generating plasmas into the chamber body, a cooling water supplier configured to supply cooling water into the inductive antenna, a heating plate set on a upper part of the inductive antenna, and a heat conductive member filled in a space between the heating plate and the dielectric window to contact the heating plate, the inductive antenna and the dielectric window, wherein the heat conductive member makes the dielectric window to have a uniform heat distribution through the heat conduction between the inductive antenna and the dielectric window, and the heat conduction between the heating plate and the dielectric window.

Abstract: Provided is a plasma reactor having a dual inductively coupled plasma source that includes a plasma reactor body having a substrate processing area and a dielectric window which comes in contact with the substrate processing area; and a plasma source including a first antenna for providing first induced electromotive force for generating plasma onto a central area of the substrate processing area through the dielectric window and a second antenna for providing second induced electromotive force for generating the plasma onto an outer area of the substrate processing area, wherein a TSV is formed at a target substrate within the substrate processing area by repeatedly performing a deposition process and an etch process using the plasma generated through the dual inductively coupled plasma source.

Abstract: Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately.

Abstract: A method of forming a metal layer pattern comprises forming an interlayer insulating layer on a semiconductor substrate, forming a metal layer on the interlayer insulating layer, forming a mask pattern to expose a predetermined area of the metal layer, and forming a metal layer pattern by dry etching the exposed predetermined area of the metal layer with a substrate bias power of about 5 W to about 40 W.