Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.

Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.

Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.

Abstract: A method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer; filtering photoluminescence emitted from a portion of the wafer in response to the illumination; directing the filtered photoluminescence onto a detector to image the portion of the wafer on the detector with a spatial resolution of 1 ?m×1 ?m or smaller; and identifying one or more crystallographic defects in the wafer based on the detected filtered photoluminescence.

Abstract: A method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer; filtering photoluminescence emitted from a portion of the wafer in response to the illumination; directing the filtered photoluminescence onto a detector to image the portion of the wafer on the detector with a spatial resolution of 1 ?m×1 ?m or smaller; and identifying one or more crystallographic defects in the wafer based on the detected filtered photoluminescence.

Abstract: A method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer; filtering photoluminescence emitted from a portion of the wafer in response to the illumination; directing the filtered photoluminescence onto a detector to image the portion of the wafer on the detector with a spatial resolution of 1 ?m×1 ?m or smaller; and identifying one or more crystallographic defects in the wafer based on the detected filtered photoluminescence.

Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.

Abstract: Methods for fast and accurate mapping of passivation defects in a silicon wafer involve capturing of photoluminescence (PL) images while the wafer is moving, for instance, when the wafer is transported on a belt in a fabrication line. The methods can be applied to in-line diagnostics of silicon wafers in solar cell fabrication. Example embodiments include a procedure for obtaining the whole wafer images of passivation defects from a single image (map) of photoluminescence intensity, and can provide rapid feedback for process control.

Abstract: A method that includes: illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer; filtering photoluminescence emitted from a portion of the wafer in response to the illumination; directing the filtered photoluminescence onto a detector to image the portion of the wafer on the detector with a spatial resolution of 1 ?m×1 ?m or smaller; and identifying one or more crystallographic defects in the wafer based on the detected filtered photoluminescence.

Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.

Abstract: Methods for fast and accurate mapping of passivation defects in a silicon wafer involve capturing of photoluminescence (PL) images while the wafer is moving, for instance, when the wafer is transported on a belt in a fabrication line. The methods can be applied to in-line diagnostics of silicon wafers in solar cell fabrication. Example embodiments include a procedure for obtaining the whole wafer images of passivation defects from a single image (map) of photoluminescence intensity, and can provide rapid feedback for process control.