Patents by Inventor Gyoungwon Park
Gyoungwon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110228803Abstract: In one embodiment, a VCSEL includes a plurality of semiconductor layers, an insulative region, a resistive region, and a remainder region. The semiconductor layers include a lower mirror, an active region, and an upper mirror. The active region is disposed over the lower mirror and includes a first lasing region. The upper mirror is disposed over the active region. The insulative region and the resistive region are integrally formed in the semiconductor layers. The remainder region includes the semiconductor layers except for the insulative region and the resistive region integrally formed in the semiconductor layers. The insulative region is disposed between the resistive region and the remainder region.Type: ApplicationFiled: March 19, 2010Publication date: September 22, 2011Applicant: FINISAR CORPORATIONInventors: James K. Guenter, Gyoungwon Park
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Patent number: 7860143Abstract: A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.Type: GrantFiled: December 30, 2004Date of Patent: December 28, 2010Assignee: Finisar CorporationInventors: Jin K. Kim, Tzu-Yu Wang, Gyoungwon Park
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Patent number: 7858417Abstract: A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.Type: GrantFiled: October 2, 2007Date of Patent: December 28, 2010Assignee: Finisar CorporationInventors: Jae-Hyun Ryou, Gyoungwon Park
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Patent number: 7433381Abstract: A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.Type: GrantFiled: June 25, 2003Date of Patent: October 7, 2008Assignee: Finisar CorporationInventors: Tzu-Yu Wang, Hoki Kwon, Jae-Hyun Ryou, Gyoungwon Park, Jin K. Kim
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Patent number: 7391799Abstract: A vertical cavity surface emitting laser with a mode-selective mirror. A filter is formed on the top DBR stack of a VCSEL. The filter includes semiconductor layers that are etch stops for immediately superior layers. The filter is selectively etched to create a first region that is phase matched to the top DBR stack and a second region that is phase mismatched to the top DBR stack. The second region inhibits undesired modes and provides additional absorption for the undesired modes. The first region is formed using a wet-etch process whose etch depth is controlled because the semiconductor layers are etch stops for immediately superior layers.Type: GrantFiled: July 7, 2005Date of Patent: June 24, 2008Assignee: Finisar CorporationInventors: James A. Cox, Jin K. Kim, Gyoungwon Park
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Publication number: 20080020553Abstract: A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.Type: ApplicationFiled: October 2, 2007Publication date: January 24, 2008Applicant: Finisar CorporationInventors: Jae-Hyun Ryou, Gyoungwon Park
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Patent number: 7286584Abstract: A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the VCSEL structure.Type: GrantFiled: December 8, 2004Date of Patent: October 23, 2007Assignee: Finisar CorporationInventors: Tzu-Yu Wang, Jin K. Kim, Hoki Kwon, Gyoungwon Park, Jae-Hyun Ryou
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Patent number: 7277461Abstract: A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.Type: GrantFiled: June 27, 2003Date of Patent: October 2, 2007Assignee: Finisar CorporationInventors: Jae-Hyun Ryou, Gyoungwon Park
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Patent number: 7054345Abstract: A vertical cavity surface emitting laser having an oxidizable layer oxidized with enhanced lateral oxidation. The oxidation may involve adding oxygen in the form of a fluid, with or without other fluid such as water vapor, in the oxidizing environment, and/or in the layer to be oxidized. This oxidation approach may be used for layers with relatively low aluminum content such as in InP based structures, or with high aluminum content such as in GaAs based structures.Type: GrantFiled: June 27, 2003Date of Patent: May 30, 2006Assignee: Finisar CorporationInventors: Jae-Hyun Ryou, Tzu-Yu Wang, Jin K. Kim, Gyoungwon Park, Hoki Kwon
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Patent number: 7031363Abstract: A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.Type: GrantFiled: October 29, 2003Date of Patent: April 18, 2006Assignee: Finisar CorporationInventors: James R. Biard, Klein L. Johnson, Ralph H. Johnson, Gyoungwon Park, Tzu-Yu Wang
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Publication number: 20060045146Abstract: A vertical cavity surface emitting laser with a mode-selective mirror. A filter is formed on the top DBR stack of a VCSEL. The filter includes semiconductor layers that are etch stops for immediately superior layers. The filter is selectively etched to create a first region that is phase matched to the top DBR stack and a second region that is phase mismatched to the top DBR stack. The second region inhibits undesired modes and provides additional absorption for the undesired modes. The first region is formed using a wet-etch process whose etch depth is controlled because the semiconductor layers are etch stops for immediately superior layers.Type: ApplicationFiled: July 7, 2005Publication date: March 2, 2006Inventors: James Cox, Jin Kim, Gyoungwon Park
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Publication number: 20050243890Abstract: A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.Type: ApplicationFiled: December 30, 2004Publication date: November 3, 2005Inventors: Jin Kim, Tzu-Yu Wang, Gyoungwon Park
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Publication number: 20050243886Abstract: A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR.Type: ApplicationFiled: December 8, 2004Publication date: November 3, 2005Inventors: Tzu-Yu Wang, Jin Kim, Hoki Kwon, Gyoungwon Park, Jae-Hyun Ryou
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Publication number: 20050243881Abstract: A current confinement layer of a VCSEL is formed by adjusting flow rates of In-, Al-, and As-containing precursors introduced within a deposition chamber. By maintaining a low ratio between the flow rate of the As-containing precursors and the total flow rate of In- and Al-containing precursors (e.g., less than 25, 10, 5, or 1), a current confinement layer, lattice matched to InP and having an enhanced oxidation rate, may be formed.Type: ApplicationFiled: December 30, 2004Publication date: November 3, 2005Inventors: Hoki Kwon, Tzu-Yu Wang, Jae-Hyun Ryou, Jin Kim, Gyoungwon Park
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Publication number: 20050092710Abstract: A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.Type: ApplicationFiled: October 29, 2003Publication date: May 5, 2005Inventors: James Biard, Klein Johnson, Ralph Johnson, Gyoungwon Park, Tzu-Yu Wang
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Publication number: 20040264536Abstract: A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.Type: ApplicationFiled: June 27, 2003Publication date: December 30, 2004Applicant: Honeywell International Inc.Inventors: Jae-Hyun Ryou, Gyoungwon Park
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Publication number: 20040264531Abstract: A vertical cavity surface emitting laser having an oxidizable layer oxidized with enhanced lateral oxidation. The oxidation may involve adding oxygen in the form of a fluid, with or without other fluid such as water vapor, in the oxidizing environment, and/or in the layer to be oxidized. This oxidation approach may be used for layers with relatively low aluminum content such as in InP based structures, or with high aluminum content such as in GaAs based structures.Type: ApplicationFiled: June 27, 2003Publication date: December 30, 2004Applicant: Honeywell International Inc.Inventors: Jae-Hyun Ryou, Tzu-Yu Wang, Jin K. Kim, Gyoungwon Park, Hoki Kwon
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Publication number: 20040264541Abstract: A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.Type: ApplicationFiled: June 25, 2003Publication date: December 30, 2004Applicant: Honeywell International Inc.Inventors: Tzu-Yu Wang, Hoki Kwon, Jae-Hyun Ryou, Gyoungwon Park, Jin K. Kim