Abstract: The present invention relates to a vehicle camera. A vehicle camera according to one aspect comprises: a front case; a rear case having a space portion formed therein and coupled to the front case; a substrate module disposed in the space portion; and a terminal electrically connected to the substrate module and extending backward from the substrate module, wherein the rear case comprises a connector coupling portion and a bracket coupling portion which are formed on a rear surface thereof, wherein the connector coupling portion comprises a terminal hole for exposing the terminal to the outside, and the bracket coupling portion is disposed adjacent to the connector coupling portion and protrudes from the rear surface of the rear case so as to cover at least a portion of the outer circumferential surface of the connector coupling portion.

Abstract: The present invention relates to a vehicle camera. A vehicle camera according to one aspect comprises: a front case; a rear case having a space portion formed therein and coupled to the front case; a substrate module disposed in the space portion; and a terminal electrically connected to the substrate module and extending backward from the substrate module, wherein the rear case comprises a connector coupling portion and a bracket coupling portion which are formed on a rear surface thereof, wherein the connector coupling portion comprises a terminal hole for exposing the terminal to the outside, and the bracket coupling portion is disposed adjacent to the connector coupling portion and protrudes from the rear surface of the rear case so as to cover at least a portion of the outer circumferential surface of the connector coupling portion.

Abstract: A metal interconnection structure of a semiconductor device includes a metal layer having a high surface reflectivity and an ARC layer formed on the metal layer. Here, the ARC layer has a first layer formed on the metal layer and a second layer formed on the first layer. The first layer has a good step coverage property, while the second layer has a low surface reflectivity. Preferably, the first layer is a polysilicon layer, while the second layer is a CVD-TiN layer. The polysilicon layer is formed to the thickness of 50 to 300 Å, while the CVD-TiN layer is formed to the thickness of 100 to 300 Å. Furthermore, the metal layer is made of one material selected from the group consisting of aluminum, aluminum alloy, tungsten, and copper. Preferably, the metal layer is an aluminum layer.