Abstract: A nanodevice, a transistor including the nanodevice, a method of manufacturing the nanodevice, and a method of manufacturing the transistor including the nanodevice are provided. The nanodevice includes a substrate, a mask layer located on the substrate and having at least one opening, and a nanotube formed on the substrate through the opening along an edge of the opening. The nanotube extends through the opening in a direction substantially perpendicular to a surface of the substrate.

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract: A field emission device, a field emission display device, and a method for manufacturing the same are disclosed. The field emission device includes: i) a substrate; ii) an electrode positioned on the substrate; iii) a mask layer positioned on the electrode and including one or more openings; and iv) a plurality of nanostructures positioned on the electrode via the openings and formed to extend radially. The plurality of nanostructures may be applied to emit an electron upon receiving a voltage from the electrode.

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract: A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor thin film on the substrate on which the spherical balls are coated. The entire process can be simplified and a high-quality compound semiconductor thin film can be grown in a short amount of time in comparison to an epitaxial lateral overgrowth (ELO) method.

Abstract: A heterojunction structure composed of a p-type semiconductor thin film and n-type ZnO-based nanorods epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction and the use of ZnO having high exciton energy as a light emitting material, and thus it can be advantageously used in nano-devices such as LED, field effect transistor, photodetector, sensor, etc.

Abstract: A nanodevice including a nanorod and a method for manufacturing the same is provided.

Abstract: Disclosed herein is an electrical light-emitting device including a transparent conductive nanorod type electrode, in which transparent conductive nanorods grown perpendicular to a light-emitting layer are used as the electrode. Hence, light is not absorbed by the electrode, and tunneling easily occurs due to nanocontact of the nanorods, thus increasing current injection efficiency, and also, total internal reflections decrease. Thereby, the light-emitting device according to this invention has light-emitting properties and luminous efficiency superior to conventional light-emitting devices, including metal electrodes or thin film type transparent electrodes.

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract: A radiation detector has an electron emitter that includes a coated nanostructure on a support. The nanostructure can include a plurality of nanoneedles. A nanoneedle is a shaft tapering from a base portion toward a tip portion. The tip portion has a diameter between about 1 nm to about 50 nm and the base portion has a diameter between about 20 nm to about 300 nm. Each shaft has a length between about 100 nm to about 3,000 nm and an aspect ratio larger than 10. A coating covers at least the tip portions of the shafts. The coating exhibits negative electron affinity and is capable of emitting secondary electrons upon being irradiated by radiation. The nanostructure can also include carbon nanotubes (CNTs) coated with a material selected from the group of aluminum nitride (AlN), gallium nitride (GaN), and zinc oxide (ZnO).

Abstract: Disclosed herein is a method of selectively growing zinc oxide microstructures and the zinc oxide microstructures prepared using the method. The method includes the steps of applying an organic material or an inorganic material on a substrate, forming a pattern having a predetermined specific location and a predetermined interval on the substrate using a physical or chemical etching method, and selectively growing zinc oxide microstructures at the location where the pattern is formed using various growth methods such as hydro-thermal synthesis, physical vapor deposition, chemical vapor deposition method or the like.

Abstract: Disclosed is a photocatalyst having a matrix which comprises a substrate and oxide-based nanomaterial formed on the substrate. The photocatalyst has a ratio of area to volume that is higher than a conventional photocatalyst having the same components, and also has a nano-sized photocatalytic layer. Thereby, it has excellent photolytic properties.

Abstract: A heterojunction structure composed of a nitride semiconductor thin film and nanostructures epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction, and thus can be advantageously used in light emitting devices.

Abstract: A radiation detector has an electron emitter that includes a coated nanostructure on a support. The nanostructure can include a plurality of nanoneedles. A nanoneedle is a shaft tapering from a base portion toward a tip portion. The tip portion has a diameter between about 1 nm to about 50 nm and the base portion has a diameter between about 20 nm to about 300 nm. Each shaft has a length between about 100 nm to about 3,000 nm and an aspect ratio larger than 10. A coating covers at least the tip portions of the shafts. The coating exhibits negative electron affinity and is capable of emitting secondary electrons upon being irradiated by radiation. The nanostructure can also include carbon nanotubes (CNTs) coated with a material selected from the group of aluminum nitride (AlN), gallium nitride (GaN), and zinc oxide (ZnO).

Abstract: A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor thin film on the substrate on which the spherical balls are coated. The entire process can be simplified and a high-quality compound semiconductor thin film can be grown in a short amount of time in comparison to an epitaxial lateral overgrowth (ELO) method.

Abstract: Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. Accordingly, a high-quality nitride semiconductor thin film can be deposited on a variety of inexpensive, large-sized substrates. Also, because the nitride semiconductor thin film containing the semiconductor nanorods can easily emit light through openings between the nanorods, internal scattering can be greatly reduced. Thus, the nitride semiconductor thin film can be usefully employed in optical devices such as light emitting diodes and electronic devices.

Abstract: A heterojunction structure composed of a p-type semiconductor thin film and n-type ZnO-based nanorods epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction and the use of ZnO having high exciton energy as a light emitting material, and thus it can be advantageously used in nano-devices such as LED, field effect transistor, photodetector, sensor, etc.

Abstract: Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. Accordingly, a high-quality nitride semiconductor thin film can be deposited on a variety of inexpensive, large-sized substrates. Also, because the nitride semiconductor thin film containing the semiconductor nanorods can easily emit light through openings between the nanorods, internal scattering can be greatly reduced. Thus, the nitride semiconductor thin film can be usefully employed in optical devices such as light emitting diodes and electronic devices.

Abstract: A zinc oxide (ZnO) based nanorod is provided. The ZnO based nanorod has a quantum well or a coaxial quantum structure and is formed by alternately laminating two or more layers selected from the group consisting of a zinc oxide layer; and a layer of a material which has a lattice constant similar to that of zinc oxide, at one or more cycle.

Abstract: A magnetic material-nanomaterial heterostructural nanorod is provided. The magnetic material-nanomaterial heterostructural nanorod includes a nanomaterial template and a magnetic material. As the magnetic material, the film of a mono-compositional magnetic metal, magnetic ceramic, a multi-compositional magnetic metal, or magnetic ceramic alloy can be deposited on the tip of the nanomaterial template.