Abstract: A semiconductor package includes a package substrate having a first region, a second region and third region sequentially arranged from a first side portion to a second side portion thereof. The second region has a chip mounting region in a central region. A semiconductor chip is disposed in the chip mounting region and is mounted on a plurality of substrate pads of the package substrate. A pair of first flow control structures is disposed in the first region and is arranged symmetrically on both sides along a center line passing through a center of the chip mounting region. At least one pair of second flow control structures is disposed in the second region of the package substrate and is arranged symmetrically on both sides of the chip mounting region. A molding member is on the package substrate and fills a gap between the semiconductor chip and the package substrate.

Abstract: Disclosed are semiconductor molding apparatuses and compression molding methods. The semiconductor molding apparatus comprises an upper mold capable of supporting a substrate, a lower mold that provides a first cavity capable of being filled with a resin, a guide member that provides a second cavity to be filled with the resin and vertically penetrates the lower mold, and a guide lift capable of driving the guide member to vertically move. The lower mold includes a base plate that extends in a horizontal direction and a sidewall member that upwardly extends from the base plate. The guide lift drives the guide member to vertically move such that a top surface of the guide member moves between a top surface of the base plate and a top surface of the sidewall member.

Abstract: An organometallic compound represented by Chemical Formula 1, Ir(LA)m(LB)n, and an organic light-emitting diode including the same. The organometallic compound may act as a dopant of a light-emitting layer of the organic light-emitting diode. An operation voltage of the device may be lowered, and luminous efficiency and a lifespan thereof may be improved.

Abstract: A semiconductor package includes a lower substrate including a lower interconnection layer; an upper substrate on the lower substrate, a recessed surface having a step difference, and an upper interconnection layer having a through-hole extending from the recessed surface to the first surface of the upper substrate and electrically connected to the lower interconnection layer; semiconductor chip between the recessed surface of the upper substrate and the lower substrate and including connection pads electrically connected to the lower interconnection layer; interconnect structure between the second surface of the upper substrate and the lower substrate and electrically connecting the lower interconnection layer to the upper interconnection layer; and an insulating member including a first portion covering at least a portion of the semiconductor chip and interconnect structure, a second portion extending from the first portion into the through-hole, and a third portion covering at least a portion of the first

Abstract: A chip protection device includes a protection frame extending around side surfaces of a semiconductor chip mounted on a substrate. The protection frame includes a plurality of side walls, each wall facing and spaced apart from a respective side surface of the semiconductor chip, and a plurality of upper walls, each upper wall extending inward from an upper portion of a respective side wall toward the semiconductor chip. A plurality of apertures are formed through the side walls and through which a fluid enters and exits. The protection frame defines an inner space in which the fluid can flow via the plurality of apertures. Heat from the side surfaces of the semiconductor chip is transferred to the fluid in the inner space.

Abstract: An organic light emitting diode includes an anode, an emission layer disposed on the anode and including a host, a phosphorescent dopant represented by Chemical Formula 1 and a fluorescent dopant represented by Chemical Formula 2, and a cathode disposed on the emission layer formed by mixing the fluorescent dopant with the phosphorescent dopant bonded to an acceptor at a specific site, thereby energy loss during an emission process can be minimized and energy transfer efficiency can be improved, and an organic light emitting diode with improved luminous efficiency and an organic light emitting display device having the same can be provided.

Abstract: An organic light emitting diode includes an anode, an emission layer disposed on the anode and including a host, a phosphorescent dopant represented by Chemical Formula 1 and a fluorescent dopant represented by Chemical Formula 2, and a cathode disposed on the emission layer formed by mixing the fluorescent dopant with the phosphorescent dopant including an acceptor at a specific site, thereby energy loss during an emission process can be minimized and energy transfer efficiency can be improved and an organic light emitting diode with excellent luminous efficiency and an organic light emitting display device having the same can be achieved.

Abstract: Disclosed is a novel organometallic compound in which a main ligand (LA) has a fused ring structure including a thiophene group. The organometallic compound acts as a dopant of a phosphorescent light-emitting layer of an organic light-emitting diode. Thus, an operation voltage of the diode is lowered, and luminous efficiency and a lifespan thereof are improved.