Abstract: Provided is a non-oriented electrical steel sheet including silicon (Si): 2.8 wt % to 3.8 wt %, manganese (Mn): 0.2 wt % to 0.5 wt %, aluminum (Al): 0.5 wt % to 1.2 wt %, carbon (C): more than 0 wt % and not more than 0.002 wt %, phosphorus (P): more than 0 wt % and not more than 0.015 wt %, sulfur (S): more than 0 wt % and not more than 0.002 wt %, nitrogen (N): more than 0 wt % and not more than 0.002 wt %, titanium (Ti): more than 0 wt % and not more than 0.002 wt %, and a balance of iron (Fe) and unavoidable impurities, wherein, in a final microstructure, grains with {111}//ND orientation have a volume fraction of 30% or less and an average misorientation angle of 23° or more, and grains with {001}//ND orientation have a volume fraction of 15% or more and an average misorientation angle of 48° or more.

Abstract: Provided are an ultra-high strength cold-rolled steel sheet whose microstructure has been controlled to have high strength and elongation, and a manufacturing method thereof. In accordance with an embodiment of the present disclosure, the ultra-high strength cold-rolled steel sheet includes: carbon (C): 0.28% to 0.45%; silicon (Si): 1.0% to 2.5%; manganese (Mn): 1.5% to 3.0%; aluminum (Al): 0.01% to 0.05%; chromium (Cr): greater than 0% and 1.0% or less; molybdenum (Mo): greater than 0% and 0.5% or less; a total of niobium (Nb), titanium (Ti) and vanadium (V): greater than 0% and 0.1% or less; phosphorus (P): greater than 0% and 0.03% or less; sulfur (S): greater than 0% and 0.03% or less; and nitrogen (N): greater than 0% and 0.

Abstract: A steel sheet having high strength and high formability according to an aspect of the present invention includes: % by weight, an amount of 0.12-0.22% of carbon (C); an amount of 1.6-2.4% of silicon (Si); an amount of 2.0-3.0% of manganese (Mn); an amount of 0.01-0.05% of aluminum (Al); an amount greater than 0 and less than or equal to 0.05% of the sum of one or more of titanium (Ti), niobium (Nb) and vanadium (V); an amount of 0.015% or less of phosphorus (P); an amount of 0.003% or less of sulfur (S); an amount of 0.006% or less of nitrogen (N); and the reminder of Fe and inevitable impurities, and has a yield strength (YS) of 850 MPa or greater, a tensile strength (TS) of 1180 MPa or greater, an elongation ratio (EL) of 14% or greater, and a hole expansion ratio (HER) or 30% of greater.

Abstract: Disclosed are a hot-dip galvannealed steel sheet with ultra-high strength and high formability, and a manufacturing method therefor. In an exemplary embodiment, a hot-dip galvannealed steel sheet include: a base steel sheet; and a hot-dip galvannealed layer formed on the surface of the base steel sheet. The base steel sheet includes an amount of 0.05 to 0.15 wt % of carbon (C), an amount greater than 0 and less than or equal to 1.0 wt % of silicon (Si), an amount of 4.0 to 9.0 wt % of manganese (Mn), an amount greater than 0 and less than or equal to 0.6 wt % of aluminum (Al), an amount greater than 0 and less than or equal to 0.02 wt % of phosphorus (P) in, an amount greater than 0 and less than or equal to 0.005 wt % of sulfur (S), an amount greater than 0 and less than or equal to 0.006 wt % of nitrogen (N), and the balance of iron (Fe) and other inevitable impurities.

Abstract: Provided herein is a steel sheet having high strength and high formability according to an aspect of the present invention including, % by weight, an amount of 0.05 to 0.15% of carbon (C), an amount greater than 0 and 0.4% or less of silicon (Si), an amount of 4.0-9.0% of manganese (Mn), an amount of greater than 0 and 0.3% or less of aluminum (Al), an amount of 0.02% or less of phosphorus (P), an amount of 0.005% or less of sulfur (S), an amount of 0.006% or less of nitrogen (N), and the remainder of iron (Fe) and other inevitable impurities. The steel sheet has a microstructure consisting of ferrite and residual austenite. The grain size of the microstructure is 3 ?m or less. The steel sheet has a yield strength (YS) of 800 MPa or greater, a tensile strength (TS) of 980 MPa or greater, an elongation (EL) of 25% or greater, and a hole expansion ratio (HER) of 20% or greater.

Abstract: Methods of manufacturing a resistance change layer and a resistive random access memory device are provided. The method of manufacturing a resistance change layer includes forming a preliminary resistance change layer including an oxide semiconductor material on a substrate and irradiating the preliminary resistance change layer with an electron beam to a predetermined depth. On a path along which the electron beam is irradiated, a composition ratio of the resistance change layer changes in a direction in which a density of oxygen vacancies of the oxide semiconductor material increases. Accordingly, the composition ratio of a resistance change layer is easily controlled using electron beam irradiation. In addition, since interfacial surface roughness and internal defect structures of an oxide semiconductor are controlled by electron beam irradiation, a resistance change ratio is improved and thereby device characteristics can be improved.

Abstract: Methods of manufacturing a resistance change layer and a resistive random access memory device are provided. The method of manufacturing a resistance change layer includes forming a preliminary resistance change layer including an oxide semiconductor material on a substrate and irradiating the preliminary resistance change layer with an electron beam to a predetermined depth. On a path along which the electron beam is irradiated, a composition ratio of the resistance change layer changes in a direction in which a density of oxygen vacancies of the oxide semiconductor material increases. Accordingly, the composition ratio of a resistance change layer is easily controlled using electron beam irradiation. In addition, since interfacial surface roughness and internal defect structures of an oxide semiconductor are controlled by electron beam irradiation, a resistance change ratio is improved and thereby device characteristics can be improved.