Abstract: A phase detection circuit may include an edge trigger circuit, a strobe generation circuit and a phase detector. The edge trigger circuit generates a falling clock signal and a rising clock signal based on a reference clock signal and a target clock signal. The strobe generation circuit generates a falling strobe signal and a rising strobe signal having pulse widths varying based on a phase relationship between the reference clock signal and the target clock signal. The phase detector generates a phase detection signal based on the falling clock signal, the rising clock signal, the falling strobe signal and the rising strobe signal.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A clock generating circuit includes a first delay line, a second delay line, a selected phase mixing circuit and, a delay control circuit. The first delay line delays, based on a delay control signal, an input clock signal to generate a first delay clock signal. The second delay line delays, based on the delay control signal, the input clock signal to generate a second delay clock signal. The selected phase mixing circuit generates, based on a first selection signal and a second selection signal, an output clock signal from at least one between the first delay clock signal and the second delay clock signal. The delay control circuit monitors duty cycles of the first delay clock signal and the second delay clock signal to generate the first selection signal and the second selection signal thereby selecting at least one between the first delay line and the second delay line.

Abstract: A phase mixing circuit includes a first driver comprising 2n inverters configured to drive a first clock signal, where n is a positive integer, and a first selection circuit configured to couple each of the 2n inverters of the first driver to a first mixing node, on the basis of a weight having first to 2nth bits. The phase mixing circuit also includes a second driver comprising 2n inverters configured to drive a second clock signal and a second selection circuit configured to couple each of the 2n inverters of the second driver to the first mixing node, on the basis of an inverted signal of the weight.

Abstract: In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.

Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: A signal generation circuit includes a first delay circuit, a second delay circuit, and a duty control circuit. The first delay circuit delays a first input signal to generate a first output signal. The second delay circuit delays a second input signal to generate a second output signal. The duty control circuit compares phases of the first and second output signals and changes the value of the second delay control signal, and then decreases the times, by which the first and second input signals are delayed, by the same value.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The second internal interconnect can be coupled to the second electronic device and the first electronic device. The encapsulant can cover the substrate inner sidewall and the device stack, and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Disclosed is a method for producing a diene-based graft copolymer resin, and a diene-based graft copolymer resin produced therefrom, the method including: adding, into a reactor, a polymerization solution containing a diene-based rubber polymer, an aromatic vinyl-based monomer, a vinyl cyan-based monomer, a polymerization initiator, and a reaction solvent, and polymerizing the polymerization solution to prepare a polymer; recovering a solution containing unreacted monomers and a reaction solvent from the polymerization solution, dispersing a releasing agent in the recovered solution, and then adding the solution into the front end of a volatilization tank; and removing the unreacted monomers and the reaction solvent from the volatilization tank.

Abstract: A signal generation circuit includes a first delay circuit, a second delay circuit, and a duty control circuit. The first delay circuit delays a first input signal to generate a first output signal. The second delay circuit delays a second input signal to generate a second output signal. The duty control circuit compares phases of the first and second output signals and changes the value of the second delay control signal, and then decreases the times, by which the first and second input signals are delayed, by the same value.

Abstract: A phase mixing circuit includes a first driver comprising 2n inverters configured to drive a first clock signal, where n is a positive integer, and a first selection circuit configured to couple each of the 2n inverters of the first driver to a first mixing node, on the basis of a weight having first to 2nth bits. The phase mixing circuit also includes a second driver comprising 2n inverters configured to drive a second dock signal and a second selection circuit configured to couple each of the 2n inverters of the second driver to the first mixing node, on the basis of an inverted signal of the weight.

Abstract: A signal generation circuit includes a first delay circuit, a second delay circuit, and a duty control circuit. The first delay circuit delays a first input signal to generate a first output signal. The second delay circuit delays a second input signal to generate a second output signal. The duty control circuit compares phases of the first and second output signals and changes the value of the second delay control signal, and then decreases the times, by which the first and second input signals are delayed, by the same value.

Abstract: A clock generation circuit may include a clock receiver, a first delay loop circuit, and a second delay loop circuit. The clock receiver may receive a first clock signal and a second clock signal and generate a first reception clock signal and a second reception clock signal. The first delay loop circuit may receive the first reception clock signal and the second reception clock signal generate a reference clock signal. The first delay loop circuit may perform a delay-locking operation on the reference clock signal to generate a first delay locked clock signal. The second delay loop circuit may delay the first reception clock signal and the second reception clock signal based on the first delay locked clock signal and an internal clock signal to generate a first internal clock signal.

Abstract: A method, performed by a device, of providing a response to a user's voice input, includes capturing, via a camera of the device, an image including at least one object; activating a microphone of the device as the image is captured; receiving, via the microphone, the user's voice input for the object; determining the intention of the user with respect to the object by analyzing the received voice input; and providing a response regarding the at least one object based on the determined intention of the user.

Abstract: Disclosed is an object recognition method including: obtaining a first RGB image by using a camera; predicting at least one first region, in which an object is unrecognizable, in the first RGB image based on brightness information of the first RGB image; determining at least one second region, in which an object exists, from among the at least one first region, based on object information obtained through a dynamic vision sensor; obtaining an enhanced second RGB image by controlling photographic configuration information of the camera in relation to the at least one second region; and recognizing the object in the second RGB image.

Abstract: A signal generation circuit includes a synchronization circuit, a pulse width control circuit, and an output circuit. The synchronization circuit synchronizes an input signal with a clock signal to generate a synchronization signal. The pulse width control circuit generates a start signal from the synchronization signal and generate an end signal by delaying the synchronization signal by a time corresponding to an off control signal in synchronization with the clock signal. The output circuit generates an output signal based on the start signal and the end signal.

Abstract: A clock generation circuit may include a clock receiver, a first delay loop circuit, and a second delay loop circuit. The clock receiver may receive a first clock signal and a second clock signal and generate a first reception clock signal and a second reception clock signal. The first delay loop circuit may receive the first reception clock signal and the second reception clock signal generate a reference clock signal. The first delay loop circuit may perform a delay-locking operation on the reference clock signal to generate a first delay locked clock signal. The second delay loop circuit may delay the first reception clock signal and the second reception clock signal based on the first delay locked clock signal and an internal clock signal to generate a first internal clock signal.

Abstract: A latched comparator includes a first amplification circuit, a second amplification circuit and a latch circuit. The first amplification circuit changes voltage levels of first and second output nodes based on first and second input signals when an operation speed of a semiconductor apparatus is relatively slow. The second amplification circuit changes voltage levels of third and fourth output nodes based on the first and second input signals when the operation speed of the semiconductor apparatus is relatively fast. The latch circuit generates first and second latch signals based on the voltage levels of the first and second output nodes or based on the voltage levels of the third and fourth output nodes according to the operation speed of the semiconductor apparatus.

Abstract: A signal generation circuit includes a synchronization circuit, a pulse width control circuit, and an output circuit. The synchronization circuit synchronizes an input signal with a clock signal to generate a synchronization signal. The pulse width control circuit generates a start signal from the synchronization signal and generate an end signal by delaying the synchronization signal by a time corresponding to an off control signal in synchronization with the clock signal. The output circuit generates an output signal based on the start signal and the end signal.

Abstract: A phase detection circuit may include an edge trigger circuit, a strobe generation circuit and a phase detector. The edge trigger circuit generates a falling clock signal and a rising clock signal based on a reference clock signal and a target clock signal. The strobe generation circuit generates a falling strobe signal and a rising strobe signal having pulse widths varying based on a phase relationship between the reference clock signal and the target clock signal. The phase detector generates a phase detection signal based on the falling clock signal, the rising clock signal, the falling strobe signal and the rising strobe signal.