Abstract: A storage device may generate mapping information between a plurality of memory regions and one or more namespaces. The storage device may record information on empty memory regions among the plurality of memory regions in an empty table, and may determine empty memory regions to be mapped to a target namespace among the empty memory regions recorded in the empty table.

Abstract: A storage device, a controller, and a method for performing global wear-leveling may count write counts of a plurality of respective cores in each of a plurality of logical areas each including logical block address groups of the plurality of cores, determine, on the basis of degradation counts of the plurality of cores, a first core and a second core for which data swap is to be performed, determine a target logical area among the plurality of logical areas on the basis of a write count of the first core and a write count of the second core, and perform data swap between a first logical block address group of the first core included in the target logical area and a second logical block address group of the second core included in the target logical area.

Abstract: A memory system may include: a nonvolatile memory device comprising a plurality of memory blocks, each block having a plurality of pages, each page having a plurality of memory cells, wherein the plurality of memory block includes an SLC (Single Level Cell) block and an MLC (Multi-Level Cell) block; and a controller suitable for programming input data transmitted from a host to both the SLC block and the MLC block in response to a first program command, and invalidating the input data programmed in the SLC block at a time point when the program operation for the MLC block is completed, when the memory system is powered on after an SPO (Sudden Power-Off) occurred while the program operation was performed on both the SLC block and the MLC block, the controller may perform a recovery operation to the MLC block based on valid data programmed in the SLC block.

Abstract: A memory system may include: a nonvolatile memory device comprising a plurality of memory blocks, each block having a plurality of pages, each page having a plurality of memory cells, wherein the plurality of memory block includes an SLC (Single Level Cell) block and an MLC (Multi-Level Cell) block; and a controller suitable for programming input data transmitted from a host to both the SLC block and the MLC block in response to a first program command, and invalidating the input data programmed in the SLC block at a time point when the program operation for the MLC block is completed, when the memory system is powered on after an SPO (Sudden Power-Off) occurred while the program operation was performed on both the SLC block and the MLC block, the controller may perform a recovery operation to the MLC block based on valid data programmed in the SLC block.