Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2L1)n??[Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.

Abstract: Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1: M may be strontium (Sr) or barium (Ba), X1 and X2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R1 and R2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.

Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2?L1)n??[Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

Abstract: A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

Abstract: A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300° C. to about 600° C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300° C. to about 600° C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

Abstract: A method of fabricating a semiconductor device includes feeding a suppression gas, a source gas, a reactive gas, and a purge gas including an inert gas, into a process chamber in which a substrate is disposed. The suppression gas suppresses the physical adsorption of the source gas onto the substrate. As a result, a thin film is formed on the substrate.

Abstract: A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.