Patents by Inventor Gyungseon Seol

Gyungseon Seol has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic gate enhancement of Schottky junction solar cells
    Patent number: 9331217
    Abstract: Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: May 3, 2016
    Assignee: University of Florida Research Foundation, Inc.
    Inventors: Andrew Gabriel Rinzler, Pooja Wadhwa, Jing Guo, Gyungseon Seol
  • ELECTRONIC GATE ENHANCEMENT OF SCHOTTKY JUNCTION SOLAR CELLS
    Publication number: 20120312371
    Abstract: Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.
    Type: Application
    Filed: April 27, 2011
    Publication date: December 13, 2012
    Inventors: Andrew Gabriel Rinzler, Pooja Wadhwa, Jing Guo, Gyungseon Seol